Development of radiation detection materials

Lee, Chae-Deok; Hartnett, T.; Tustison, Randy

doi:10.1117/12.918950

Cited by 2 publications

(2 citation statements)

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“…Published August 7, 2014 We live in a world where energy and resource efficiencies are becoming more and more important. Optimized luminescent materials are required for light emitting diodes of the correct hue, [1][2][3][4] to improve the efficiency of solar cells, [5][6][7] to make longer lasting and brighter "glow in the dark" phosphors, [8][9][10] and for faster, brighter, more proportional scintillators for particle and astro-physics, medical imaging and homeland security, [11][12][13][14] and this is all needed with resources that may be limited by physical availability or global politics. [15][16][17][18] It is neccessary therefore to find improved and/or alternative luminescent materials.…”

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confidence: 99%

Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Rogers

Dorenbos

2014

ECS J. Solid State Sci. Technol.

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The vacuum referred binding energy (VRBE) of the single electron in the lowest energy 3d level of Sc 2+ , V 4+ , Cr 5+ , the lowest 4d level of Y 2+ , Zr 3+ , Nb 4+ , Mo 5+ and the lowest 5d level of Ta 4+ , and W 5+ in various compounds are determined by means of the chemical shift model. They will be compared with the VRBE in the already established lowest 3d level of Ti 3+ and the lowest 5d level of Eu 2+ and Ce 3+ . Clear trends with changing charge of the transition metal (TM) cation and with changing principle quantum number n = 3, 4, or 5 of the nd level will be identified. This work will demonstrate that the trends correlate with the VRBE in the free ion nd TM cation level. The acquired knowledge on the VRBE of the electron in the nd TM impurity levels but also on TM based compounds with nd type of conduction band bottom provides new insight in the luminescence properties of TM activated compounds. © 2014 The Electrochemical Society. [DOI: 10.1149/2.0121410jss] All rights reserved.Manuscript submitted May 23, 2014; revised manuscript received July 22, 2014. Published August 7, 2014 We live in a world where energy and resource efficiencies are becoming more and more important. Optimized luminescent materials are required for light emitting diodes of the correct hue, [1][2][3][4] to improve the efficiency of solar cells, [5][6][7] to make longer lasting and brighter "glow in the dark" phosphors, [8][9][10] and for faster, brighter, more proportional scintillators for particle and astro-physics, medical imaging and homeland security, [11][12][13][14] and this is all needed with resources that may be limited by physical availability or global politics. [15][16][17][18] It is neccessary therefore to find improved and/or alternative luminescent materials. The use of ab initio or semi-empirical models to predict the optical properties and electronic structures of luminescent materials are important in aiding this work, see e.g. Refs. 19-22. Such models may be used to identify areas of interest, for instance identifying a promising new combination of host compound and dopant ion. They may also be used in a systematic study of whole families of compounds in order to gain new understanding of the underlying physics, 21,23 or to better understand the performance of an existing luminescent material.The location of lanthanide impurity levels in inorganic compounds has been a subject of interest for many years. In 2003 Dorenbos introduced a semi-empirical model to determine the electron binding energies in the 4f and 5d levels of lanthanides relative to the energy at the top of the host valence band in inorganic compounds. 25 Figure 2 summarizes the notation used to describe the optical transitions of relevance in this article. Ti 4+ is used in Fig. 2 to represent the transition metals while Ce 3+ , Eu 3+ and Pr 3+ are used to represent the lanthanides. Energies are expressed relative to the vacuum level (E vac ) which is the energy of an electron at rest in the vacuum. Lanthanide spectroscopy, combined with the chemi...

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Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Rogers

Dorenbos

2014

ECS J. Solid State Sci. Technol.

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“…Multinary metal chalcogenides exhibit specific structures, coordination, and noteworthy properties, which can be applied in the fields of thermoelectrics, nonlinear optics, and γ‐ray detection . In general, quaternary chalcogenides contain two or more chalcogen‐based anions that are coordinated with main‐group or transition metals to form structural units.…”

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confidence: 99%

Synthesis and characterization of new quaternary polyselenide Ba₄TMSbSe₁₂ (TM = Nb, Ta)

Chung

Chen

Lee

2019

J Chinese Chemical Soc

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Two new quaternary polyselenides, Ba4TMSbSe12 (TM = Nb, Ta), are synthesized using a solid state reaction. They crystallize in a new structural type with a P‐1 triclinic space group, characterized according to single‐crystal X‐ray diffraction. The structure is alternately stacked using isolated NbSe95− and SbSe33−, which are separated by Ba2+. The structure contains the NbSe95− unit with a bipentagonal pyramidal shape coordinated with Se2− and Se22− in monodenteate and bidentate modes. The vibrational property of the diselenide Se22− unit was studied using Raman spectrum analysis. ultraviolet–visible diffused reflectance and temperature‐dependent resistivity measurements indicate semiconductor behaviors. Calculations of electronic structures indicate the presence of a band gap and strong Se‐Se interactions in the diselenide group, which experimentally supports the measured physical properties.

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Development of radiation detection materials

Cited by 2 publications

References 6 publications

Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Synthesis and characterization of new quaternary polyselenide Ba₄TMSbSe₁₂ (TM = Nb, Ta)

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Development of radiation detection materials

Cited by 2 publications

References 6 publications

Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Vacuum Referred Binding Energy of the Single 3d, 4d, or 5d Electron in Transition Metal and Lanthanide Impurities in Compounds

Synthesis and characterization of new quaternary polyselenide Ba4TMSbSe12 (TM = Nb, Ta)

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Synthesis and characterization of new quaternary polyselenide Ba₄TMSbSe₁₂ (TM = Nb, Ta)