Development of organic thin film transistors based on flexible substrates

Richter, Stefan; Ploetner, M.; Fischer, Wolf‐Joachim; Schneider, Michael; Nguyen, Phuong Tuyen; Plieth, W.; Kiriy, Nataliya; Adler, Hans‐Juergen P.

doi:10.1016/j.tsf.2004.08.124

Cited by 10 publications

(7 citation statements)

References 9 publications

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“…More recently, the compatibility of anodized Al 2 O 3 as well as a number of polymeric dielectric films with a variety of polymeric substrates has been investigated for the fabrication of polymeric and molecularbased OFETs. [28] Knipp et al reported on a comparison of the properties of SiO x and SiN x fabricated via plasma-enhanced chemical vapor deposition (PECVD) as gate dielectrics, and characterization of the resulting pentacene-based TFTs. [29] This deposition technique was selected since it enables large-area fabrication and low-cost electronics on glass or flexible plastic substrates.…”

Section: ±2mentioning

confidence: 99%

Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

2005

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In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin‐film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low‐cost organic electronics, this review focuses on three classes of OTFT‐compatible dielectrics: i) inorganic (high‐k) materials; ii) polymeric materials; and iii) self‐assembled mono‐ and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low‐cost solution‐phase processing characteristics.

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Section: ±2mentioning

confidence: 99%

Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

2005

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“…Organic semiconductors offer the possibility to fabricate devices featuring biocompatibility, 1,2 mechanical flexibility, [3][4][5] and comparably low production costs. 1,2 Therefore, a wide range of applications employing organic semiconductors is being currently explored in the fields of biosensing and biomedical technologies.…”

mentioning

confidence: 99%

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

Schamoni

Noever

Nickel

et al. 2016

Applied Physics Letters

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While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule a,x-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications. V

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“…The C o of the ZA, AZ, and AZA samples is 200, 146, and 196 nF/cm 2 , respectively, which is much larger than that of their Al 2 O 3 counterpart. [26][27][28] As compared to the ZA and AZA sample, the AZ sample exhibits a smaller C o . This may be attributed to the formation of a lowk interlayer facilitated by oxygen gas during ZrO 2 sputtering.…”

Section: Resultsmentioning

confidence: 97%

Comparison of CuPc-based organic thin-film transistors made by different dielectric structures

Tang

Greiner

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Copper phthalocyanine-based organic thin-film transistors (OTFTs) with gate dielectric made by different combinations of ZrO2 and Al2O3 are fabricated. Experimental results show that as compared to the OTFTs with ZrO2/Al2O3 stacked and Al2O3/ZrO2/Al2O3 sandwiched gate dielectric, the device fabricated with the Al2O3/ZrO2 stacked gate dielectric manifests better electrical properties such as larger on/off ratio, smaller subthreshold slope, and higher carrier mobility. This could be explained by the fact that Al2O3 has good interface properties with CuPc and can act as a barrier layer, which prevents intermixing of materials at the organic/insulator interface and can slow oxygen diffusion through Al-O matrix, thus suppressing interfacial trap density. The gate-bias stress effect on the performance of OTFTs is also investigated. It is found that the threshold voltage shifts toward positive direction with stress time under a negative gate bias voltage. Longer stress times cause more degradation of the subthreshold and on/off ratio, probably due to more defect-state creation in the channel and an increase of interfacial traps and oxide charges in the dielectric during stress. Results also indicate that OTFTs with Al2O3 interlayer between the high-k dielectric and the gate electrode have less degradation in subthreshold and on/off ratio after a 3600-s stress. The involved mechanism lies in that the Al2O3 interlayer at the high-k dielectric/gate electrode interface can effectively block the injection of electrons from the gate electrode into the high-k material during electrical stress and thus less stress-induced interfacial traps and negative oxide charges in the devices. The electrical characteristics of the OTFTs after the removal of gate bias for a period of time are also studied.

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Development of organic thin film transistors based on flexible substrates

Cited by 10 publications

References 9 publications

Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

Comparison of CuPc-based organic thin-film transistors made by different dielectric structures

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