MRS Proc. 2001 DOI: 10.1557/proc-692-h9.43.1 View full text
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V. A. Kasiyan, R. Z. Shneck, Z. M. Dashevsky, S. R. Rotman

Abstract: ABSTRACTElectrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide temperature range (500-1050 °C) are compared with ZnSe annealed in liquid metal (Zn). These processes are intended to control the concentrations of the impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm 2 /Vs at 80 K and demonstrates the low native defect concentration. A high t…

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