Determining carrier mobility with a metal–insulator–semiconductor structure

Stallinga, Peter; Benvenho, Adriano R. V.; Smits, Edsger C. P.; Mathijssen, Simon G. J.; Cölle, Michael; Gomes, Henrique L.; Leeuw, Dago M. de

doi:10.1016/j.orgel.2008.05.007

Cited by 18 publications

(19 citation statements)

References 19 publications

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“…Figures 5a and 5b show, respectively, the device capacitance and loss curves as function of frequency for different DC voltages. The observed capacitance variations with frequency indicate the existence of accumulation and depletion regimes as expected for a MIS device [31][32][33][34][35] . On the loss plot, Maxwell-Wagner relaxation peaks are clearly present at around 1 Hz for different applied bias.…”

Section: Ac Electrical Characterization Of Flexible Mis Capacitorssupporting

confidence: 53%

“…The main characteristic of MIS capacitors is that capacitance varies with DC bias [31][32][33][34][35] . The Figure 8 shows the capacitance-voltage curve for the CuTsPc+PVA/Al 2 O 3 MIS device performed at 0.1 Hz.…”

Section: Ac Electrical Characterization Of Flexible Mis Capacitorsmentioning

confidence: 99%

“…To address information about the feasibility of TIJ printed electronic devices, flexible metal-insulator-semiconductor (MIS) capacitors based on copper tetrasulfonated phthalocyanine (CuTsPc) and anodic aluminum oxide (Al 2 O 3 ) were fabricated. The MIS capacitor is the core of OFETs and a powerful tool for electrical characterization of OSC, dielectrics and interfaces [31][32][33][34][35][36] . Its simple structure and versatility allow the extraction of several semiconductor parameters such as conductivity, charge carrier mobility and doping density [31][32][33][34][35] .…”

Section: Introductionmentioning

confidence: 99%

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Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

et al. 2014

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Section: Ac Electrical Characterization Of Flexible Mis Capacitorssupporting

confidence: 53%

Section: Ac Electrical Characterization Of Flexible Mis Capacitorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

et al. 2014

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“…The next step of the reactions is the hydrolysis and then the formation of neutral complexes using metal carbonyl or other reactive salts, e.g., NiCl 2 , PdCl 2 (PhCN) 2 . The following Scheme 4 gives an example of the preparation of a series of complexes from the corresponding 1,2-diketones [44,60,65,68,89,98,101,110,111]. Scheme 4.…”

Section: Methodsmentioning

confidence: 99%

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

2012

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This paper is an overview concerning the preparations and properties as well as possible applications of neutral (one component) metal 1,2-dithiolenes (and selenium analogues). The structural, chemical, electrochemical, optical and electrical behavior of these complexes depend strongly on the nature of ligand and/or the metal. The results of unsymmetrical in comparison to those of symmetrical complexes related to the properties of materials in the solid state are primarily discussed. The optical absorption spectra exhibit strong bands in the near IR spectral region ca. 700 to ca. 1950 nm. X-ray crystal structure solutions show that the complexes usually have square-planar geometry with S-S and/or M-S contacts. Some of them behave as semiconductors or conductors (metals) and are stable in air. The cyclic voltammograms at negative potentials are different from the corresponding potentials of tetrathiafulvalenes (TTFs). As a consequence, the LUMO bands occur at much lower levels than those of TTFs. Consequently, electrical measurements under conditions of field effect transistors exhibit n-type or ambipolar behavior. Illumination of materials with high power lasers exhibits non-linear optical behavior. These properties enable metal 1,2-dithiolene complexes to be classified as promising candidates for optical and electronic applications, (e.g., saturable absorbers, ambipolar inverters). OPEN ACCESSCrystals 2012, 2 763

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“…Consequen− tly, the discussion on a proper method of estimating μ in thin organic layers is still open. Besides, considering assump− tions which have to be fulfilled in a particular indirect method, scientists are also searching for new experimental methods suitable for extraction of μ [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Small signal admittance spectroscopy applied for extraction of charge carrier mobility in thin organic layers

Jarosz

Signerski

2011

Opto-Electronics Review

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The work presents new way of extraction of charge carrier mobility from small signal spectra of admittance. It can be a useful method for thin organic layers in a sandwich arrangement. It is better than the version of small signal admittance currently applied for getting charge carrier mobility, since the final result is not charged with uncertainty of geometric capacitance and the upper limit of measurable charge carrier mobility is higher.

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Determining carrier mobility with a metal–insulator–semiconductor structure

Cited by 18 publications

References 19 publications

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Neutral Metal 1,2-Dithiolenes: Preparations, Properties and Possible Applications of Unsymmetrical in Comparison to the Symmetrical

Small signal admittance spectroscopy applied for extraction of charge carrier mobility in thin organic layers

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