Determination of Trace Elements in Sintered and Single-Crystal Silicon Carbide by Laser Ablation in Liquid Inductively Coupled Plasma Mass Spectrometry

Machida, Ryo; Nishioka, Rina; Fujiwara, Masahide; Furuta, Naoki

doi:10.2116/analsci.33.537

Cited by 11 publications

(9 citation statements)

References 39 publications

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“…In this context, several analytical techniques have been applied [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. The most common approach involves the dissolution of the sample followed by inductively coupled plasma mass spectrometry (ICP-MS) or ICP-optical emission spectrometry (ICP-OES) analysis [ 6 , 16 , 17 , 18 , 19 , 20 ]. The need of samples in solution form is, however, a major limitation when treating SiC ceramics: SiC is extremely inert and difficult to dissolve even under extreme conditions (e.g., high temperatures, presence of concentrated acids and bases).…”

Section: Introductionmentioning

confidence: 99%

Tackling the Challenging Determination of Trace Elements in Ultrapure Silicon Carbide by LA-ICP-MS

et al. 2023

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The goal of accurately quantifying trace elements in ultrapure silicon carbide (SiC) with a purity target of 5N (99.999% purity) was addressed. The unsuitability of microwave-assisted acid digestion followed by Inductively Coupled Plasma Mass Spectrometry (ICP-MS) analysis was proved to depend mainly on the contamination induced by memory effects of PTFE microwave vessels and by the purity levels of acids, even if highly pure ones were used in a clean environment. A new analytical protocol for the direct analysis of the solid material by laser ablation coupled with ICP-MS (LA-ICP-MS) was then exploited. Different samples were studied; the best results were obtained by embedding SiC (powders or grains) in epoxy resin. This technique has the great advantage of avoiding any source of external contamination, as grinding, pressing and sintering pretreatments are totally unnecessary. Two different laser wavelengths (266 and 193 nm) were tested, and best results were obtained with the 266 nm laser. The optimized protocol allows the determination of elements down to the sub-mg/kg level with a good accuracy level.

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Section: Introductionmentioning

confidence: 99%

Tackling the Challenging Determination of Trace Elements in Ultrapure Silicon Carbide by LA-ICP-MS

et al. 2023

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“…Through this, the use of matrix-matched standards or certified reference materials (CRMs) can be circumvented. Laser ablation in liquid has been successfully applied to several material science samples in the past [ 26 , 27 ]. The flexible preparation of customized liquid standards allows for quantitative investigations of a wide range of materials not accessible with more conventional techniques.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Depth Profiling Using Online-Laser Ablation of Solid Samples in Liquid (LASIL) to Investigate the Oxidation Behavior of Transition Metal Borides

et al. 2022

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The increased demand for sustainability requires, among others, the development of new materials with enhanced corrosion resistance. Transition metal diborides are exceptional candidates, as they exhibit fascinating mechanical and thermal properties. However, at elevated temperatures and oxidizing atmospheres, their use is limited due to the fact of their inadequate oxidation resistance. Recently, it was found that chromium diboride doped with silicon can overcome this limitation. Further improvement of this protective coating requires detailed knowledge regarding the composition of the forming oxide layer and the change in the composition of the remaining thin film. In this work, an analytical method for the quantitative measurement of depth profiles without using matrix-matched reference materials was developed. Using this approach, based on the recently introduced online-LASIL technique, it was possible to achieve a depth resolution of 240 nm. A further decrease in the ablation rate is possible but demands a more sensitive detection of silicon. Two chromium diboride samples with different Si contents suffering an oxidation treatment were used to demonstrate the capabilities of this technique. The concentration profiles resembled the pathway of the formed oxidation layers as monitored with transmission electron microscopy. The stoichiometry of the oxidation layers differed strongly between the samples, suggesting different processes were taking place. The validity of the LASIL results was cross-checked with several other analytical techniques.

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“…Recently, the use of laser ablation in liquid (LAL) sampling for the determination of trace elements in silicon carbide, which, like GaN, is also a refractory material, has been reported. 11,12 In LAL sampling, a laser is used to atomize part of a solid material and produce a suspension of nanoparticles that can then be analyzed. Machida et al reported that sintered and single-crystal silicon carbide were easily sampled by LAL, and that nanoparticles with a different chemical composition to that of the original sample were obtained; however, high-pressure acid digestion with sulfuric acid was still needed to digest the nanoparticles before analysis, which took a long time and was subject to serious spectral interferences.…”

Section: Introductionmentioning

confidence: 99%

“…Machida et al reported that sintered and single-crystal silicon carbide were easily sampled by LAL, and that nanoparticles with a different chemical composition to that of the original sample were obtained; however, high-pressure acid digestion with sulfuric acid was still needed to digest the nanoparticles before analysis, which took a long time and was subject to serious spectral interferences. 11 Fujiwara et al evaluated the uncertainties associated with LAL sampling, and concluded that there was room to improve the uncertainty derived from a small amount of sample by weighing with a microbalance, which was larger than other uncertainties. 12 In the present study, we examined the differences between single-crystal GaN before and after LAL sampling, and devised an analytical method to easily and precisely quantify the trace elements in a sample of GaN.…”

Section: Introductionmentioning

confidence: 99%

Atomization and Changes in Chemical Composition by Laser Ablation in Liquid prior to Determination of Trace Elements in Gallium Nitride

Hirosawa

Furuta

2019

ANAL. SCI.

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Trace elements contained in single-crystal gallium nitride (GaN), which is a refractory material, were determined by inductively coupled plasma mass spectrometry with laser ablation in liquid (LAL) sampling. Particle size analysis by dynamic light scattering confirmed that LAL atomized the single-crystal GaN, and scanning electron microscopy/energydispersive X-ray spectrometry revealed that LAL sampling converted the GaN to gallium oxide particles. The atomization and changes in the chemical composition allowed for easy digestion of the sampled particles with nitric acid and a hot plate instead of with hydrochloric or sulfuric acid, a microwave digestion system, and a high-pressure vessel. Trace element analysis revealed the presence of trace Mg, Ge, Y, and Cd in single-crystal GaN, and the detection limits for these elements were 0.1-2 mg kg-1. The uncertainty derived from the small amount of sample used, which is a disadvantage of LAL sampling, was reduced by calculating the amount of sample ablated by measuring the concentration of the major element, Ga. We expect that the trace-element profiles of other refractory materials will be able to be determined by using this analytical approach.

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Determination of Trace Elements in Sintered and Single-Crystal Silicon Carbide by Laser Ablation in Liquid Inductively Coupled Plasma Mass Spectrometry

Cited by 11 publications

References 39 publications

Tackling the Challenging Determination of Trace Elements in Ultrapure Silicon Carbide by LA-ICP-MS

Tackling the Challenging Determination of Trace Elements in Ultrapure Silicon Carbide by LA-ICP-MS

Quantitative Depth Profiling Using Online-Laser Ablation of Solid Samples in Liquid (LASIL) to Investigate the Oxidation Behavior of Transition Metal Borides

Atomization and Changes in Chemical Composition by Laser Ablation in Liquid prior to Determination of Trace Elements in Gallium Nitride

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