Determination of the Fermi level position in dilute magnetic Ga1-<i>x</i>Mn<i>x</i>N films

Barthel, Stefan; Kunert, Gerd; Gärtner, M.; Stoica, M.; Mourad, Daniel; Kruse, C.; Figge, S.; Hommel, D.; Czycholl, Gerd

doi:10.1063/1.4869134

Cited by 6 publications

(4 citation statements)

References 29 publications

(49 reference statements)

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“…in a close proximity to the Mn-related band which is located between 1.4 to 1.8 eV above the valence band edge in (Ga,Mn)N 2,15,[37][38][39] . This conclusion is consistent with recent studies of the valency of Mn atoms in (Ga,Mn)N films which was found to be 2.4 eV 40 as well as with ellipsometric assessment of the Fermi level position in (Ga,Mn)N and corresponding theoretical calculations 41 .…”

Section: Resultssupporting

confidence: 93%

“…This conclusion is consistent with recent studies of the valency of Mn atoms in (Ga,Mn)N films which was found to be 2.4 eV (ref. 40 ) as well as with ellipsometric assessment of the Fermi level position in (Ga,Mn)N and corresponding theoretical calculations 41 . Such conditions of the Fermi level position in (Ga, Mn)N are certainly very unfavorable for achieving the carrier mediated ferromagnetism in this material, at room temperature in particular, and they advocate strongly for the superexchange Mn 3+ - Mn 3+ coupling postulated in refs 10 , 12 to explain rather low temperature ferromagnetism in these samples.…”

Section: Resultsmentioning

confidence: 99%

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Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Janicki

Kunert

Sawicki

et al. 2017

Sci Rep

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The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1−xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25–1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to −0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Janicki

Kunert

Sawicki

et al. 2017

Sci Rep

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“…The widening of the VB in the vicinity of the Fermi level follows from the subsurface layer's modification caused by the incorporation of Mn atoms, leading to the formation of a p-type (Mn)GaN-like alloy. This is in line with the literature [94][95][96], where it is shown that the Mn presence in the GaN matrix reconstructs the VB. Another reason that the VBM is practically located at the Fermi level may be surface-state deprivation and, thus, an elimination of band bending on GaN(0001).…”

Section: Mn On Gan(0001)supporting

confidence: 93%

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Grodzicki

2021

Coatings

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

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“…The widening of the VB in the vicinity of the Fermi level follows from the subsurface layer's modification caused by the incorporation of Mn atoms, leading to the formation of p-type (Mn)GaN-like alloy. This is in line with the literature [94][95][96], where it is shown that the Mn presence in the GaN matrix reconstructs the VB. Another reason that the VBM is practically located by the Fermi level may be surface states deprivation and thus an elimination of band bending on GaN(0001).…”

Section: Mn On Gan(0001)supporting

confidence: 93%

Properties of Thin Film-Covered GaN(0001) Surfaces

Grodzicki

2020

2nd Coatings and Interfaces Web Conference (CIWC-2 2020)

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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Determination of the Fermi level position in dilute magnetic Ga1-xMnxN films

Cited by 6 publications

References 29 publications

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Properties of Thin Film-Covered GaN(0001) Surfaces

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