Determination of surface-state parameters from transfer-loss measurements in CCD’s

Kriegler, R. J.; Dévényi, T; Chik, K. D.; Shappir, J.

doi:10.1063/1.325678

Cited by 31 publications

(4 citation statements)

References 11 publications

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“…The typical time constant used in these DLTS measurements for the delay time window is 1-100 ms, in order to permit averaging over up to 1000 transients during a reasonable measurement time. In accordance with interface state measurements on CCDS [29], no temperature dependence was found for these 'fast' interface defects. Because of these rather fast measurement times in the conventional DLTS, the 'slow' defects observed in RTS measurements and l[ noise were not recorded.…”

Section: Dlts Measurements On Mos Capacitorssupporting

confidence: 84%

Individual defects at the Si:SiO₂interface

Kirton¹,

Uren²,

Collins³

et al. 1989

Semicond. Sci. Technol.

118

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In micron-sized MOSFETS, the alternate capture and emission of carriers at individual Si:SiO, interface defects generates discrete switching in the source-drain resistance. The resistance changes are observed in the drain current as random telegraph signals, or as stepped transients after a strong perturbation of the trap occupation. The study of individual defects in MOSFETS has provided a powerful means of investigating the capture and emission kinetics of interface traps, has demonstrated the defect origins of low-frequency (1 / f ) noise in MOSFETS, and has provided new insight into the nature of defects at the Si:SiO, interface. Random telegraph signals in small MOSFETs

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Section: Dlts Measurements On Mos Capacitorssupporting

confidence: 84%

Individual defects at the Si:SiO₂interface

Kirton¹,

Uren²,

Collins³

et al. 1989

Semicond. Sci. Technol.

118

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show abstract

“…It has the peak at about 20 K. The interface energy distribution was determined numerically by fitting to the noise data. The experimental results by Kriegler et al [7] were used for on (E). This results can be approximated by the following function…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

Reset Noise at Low Temperatures

Bock

1996

J. Phys. IV France

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This paper presents results of the measurement and modelling of reset noise in charge-detection circuits of detector array multiplexers at low temperatures. To explain the temperature dependence of reset noise, it is proposed to take into account the source of noise associated with emission of electrons from interface states under the gate of reset transistor. It was found that at very low temperatures (T < 30 K) the emission-related component contributes most of reset noise.When applying reset pulse to the source (drain) of the reset transistor, the so-called "fA-and-spill" method of setting charge is obtained. The fill-and-spill method results in decrease of reset noise to kTC noise level but down to 40 K. The interface state energy distribution was obtained from the noise data.

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“…Open circles are data from present study, full circles from Johnson (1979), solid line from Morita et al (1978), dashed line from Deuling et al (1971), dotted line fromKriegler et al (1979) and dashdotted line fromWang (1979). 10.…”

mentioning

confidence: 77%

Admittance measurements of Si-SiO2 interface states under optical illumination

Poon

Card

1980

Journal of Applied Physics

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A new experimental technique is presented for the investigation of the localized electronic states at the silicon-silicon dioxide (Si-SiO2) interface, in which the ac conductance and capacitance of metal-oxide semiconductor structures is measured as a function of bias voltage and measurement frequency in the presence of a uniform background of optical illumination. The illumination is of photon energy in excess of the silicon energy gap, and provides for the photogeneration and supply of minority carriers to the silicon surface. The density of interface states and their capture cross sections for both majority and minority carriers can be obtained by this method, as well as possible dependencies of the cross sections on electric field at the semiconductor surface. Results obtained by conductance and capacitance measurements under illumination are in agreement with each other, and the capture cross section for minority carriers (electrons in our case) is observed to fall with increases in interface state energy towards the conduction band edge, in agreement with other workers.

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Determination of surface-state parameters from transfer-loss measurements in CCD’s

Cited by 31 publications

References 11 publications

Individual defects at the Si:SiO₂interface

Individual defects at the Si:SiO₂interface

Reset Noise at Low Temperatures

Admittance measurements of Si-SiO2 interface states under optical illumination

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Determination of surface-state parameters from transfer-loss measurements in CCD’s

Cited by 31 publications

References 11 publications

Individual defects at the Si:SiO2interface

Individual defects at the Si:SiO2interface

Reset Noise at Low Temperatures

Admittance measurements of Si-SiO2 interface states under optical illumination

Contact Info

Product

Resources

About

Individual defects at the Si:SiO₂interface

Individual defects at the Si:SiO₂interface