Determination of Optical Constants and Carrier Effective Mass of Semiconductors

Spitzer, W. G.; Fan, Heng

doi:10.1103/physrev.106.882

Cited by 715 publications

(164 citation statements)

References 15 publications

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“…3, provides a strong clue that the free-carrier dynamics in these materials is governed by a common mechanism. In doped semiconductors all carriers are delocalized, n = n doped ∼ 10 23 -10 25 m −3 [17][18][19]. In this three-dimensional, marginally metallic state the low ω p 's arise from the low band-filling.…”

Section: Figmentioning

confidence: 99%

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Metallic state in disordered quasi-one-dimensional conductors

et al. 2001

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The unusual metallic state in conjugated polymers and single-walled carbon nanotubes is studied by dielectric spectroscopy (8-600 GHz). We have found an intriguing correlation between scattering time and plasma frequency. This relation excludes percolation models of the metallic state. Instead, the carrier dynamics can be understood in terms of the low density of delocalized states around the Fermi level, which arises from the competion between disorder-induced localization and interchaininteractions-induced delocalization.The finite conductivity of a metal at zero Kelvin is a consequence of the lattice-periodicity and the finite density of states at the Fermi level (E F ). By breaking translational symmetry, disorder localizes chargecarriers. Upon growing disorder, eventually a metalinsulator transition (MIT) occurs [1], the effect being the stronger the lower the dimensionality. In one dimension (1D) any disorder localizes the electronic states. The MIT in quasi-1D conducting polymers and single-walled carbon nanotubes is also disorder-driven, but its exact nature is under severe debate. Many authors claim the presence of a "heterogeneous" state in which the relevant disorder length-scale is large compared to the electronic correlation-length. In this case, the MIT corresponds to a percolation transition of metallic islands embedded in an amorphous matrix. [2][3][4] Other studies suggest that the MIT is of the Anderson type [1] with disorder occurring on length-scales equal or less than the electronic correlation-length. [5,6] Then, extended and localized states are separated in energy by the mobility edge (E c ), and the MIT occurs when E F crosses E c .

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Section: Figmentioning

confidence: 99%

“…3 displays the room temperature Drude parameters of disordered quasi-1D conductors, conventional metals [11], crystalline 1D conductors [14,15], graphite [16], and doped semiconductors. [17][18][19] The conducting polymers are given in black (dots this work, triangles Ref. 2), and reveal a remarkable empirical correlation τ ∝ ω −1.3 p .…”

Section: Figmentioning

confidence: 99%

Metallic state in disordered quasi-one-dimensional conductors

et al. 2001

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“…The first term between the brackets describes the contribution of the free electrons, and the second term the contribution of the holes. The final term is the susceptibility associated with intervalence-band absorption [148][149][150]. The imaginary part of the dielectric constant is equal to:…”

Section: A3 Drude Model For Free Carriers In Simentioning

confidence: 99%

Ultrafast optical switching of photonic crystals

Guina¹,

Suomalainen²,

Kalkman

et al. 2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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“…The obtained parameters were verified using Hall effect [29] measurement -a standard Van der Pauw (VdP) measurement [30]. A good ohmic contact was obtained by placing the probes on the sample, so there was no need for soldering.…”

Section: Magnetic Modulationmentioning

confidence: 99%

Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

Chochol

Postava

Čada

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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Background:In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods: Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results: The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion: Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.

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Determination of Optical Constants and Carrier Effective Mass of Semiconductors

Cited by 715 publications

References 15 publications

Metallic state in disordered quasi-one-dimensional conductors

Metallic state in disordered quasi-one-dimensional conductors

Ultrafast optical switching of photonic crystals

Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

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