volume 134, issue 2-3, P207-212 2006
DOI: 10.1016/j.mseb.2006.07.008
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Abstract: Adding of relatively small amounts of N and C, on the order of 1 × 10 14 cm −3 in the growing crystals of Czochralski Si (CZ-Si) is considered now as a tool for the control of the internal gettering processes based on the precipitation of oxygen. The sensitivity of the conventional procedure of measurements by Fourier transform infrared (FT-IR) spectroscopy measurements is not sufficient to determine, in a reliable manner, such concentrations of N and C.This report contains results of the implementation of th…

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