Design of Low Power MAX Operator for Multi-valued Logic System

Chowdhury, Adib Kabir; Raj, Nikhil; Singh, Ashutosh Kumar

doi:10.1016/j.procs.2015.10.067

Cited by 5 publications

(4 citation statements)

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“…The fewer interconnects, and fewer transistors lead to the reduced power consumption down to 0.9 μW, which is lower than traditional CMOS-based MVL systems. [229] Unlike conventional material-based MVL devices with large active regions, nanoscale low-dimensional MVL devices feature significantly shrinking device dimensionality. The downscaling active region can reduce the junction capacitance and thus make the devices intrinsically faster and more energy efficient.…”

Section: External Field-induced Quaternary Invertersmentioning

confidence: 99%

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Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Meng,

Wang,

Wang

et al. 2023

Advanced Materials

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Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next‐generation integrated circuit chips and telecommunication technologies. Thanks to strategic material design and device integration, anti‐ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti‐ambipolar heterojunctions. First, we discuss the fundamental operating mechanisms of anti‐ambipolar devices. After that, potential materials used in anti‐ambipolar devices are discussed with particular attention to 2D‐based, 1D‐based, and organic‐based heterojunctions. Next, we overview the primary device applications employing anti‐ambipolar heterojunctions, including anti‐ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti‐ambipolar heterojunctions and their applications are also emphasized.This article is protected by copyright. All rights reserved

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Section: External Field-induced Quaternary Invertersmentioning

confidence: 99%

“…The fewer interconnects, and fewer transistors lead to the reduced power consumption down to 0.9 µW, which is lower than traditional CMOS‐based MVL systems. [ 229 ]…”

Section: Circuitsmentioning

confidence: 99%

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Meng,

Wang,

Wang

et al. 2023

Advanced Materials

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“…In addition, Hosseini and Roosta [6] have compared reported results against similar reported works showing that power and latency were reduced. Chowdhury et al [7], reported voltage mode NOR and MAX operators. The Max operator was designed using only 3 transistors.…”

Section: Related Workmentioning

confidence: 99%

“…The Max operator was designed using only 3 transistors. Using 2 more transistors, Chowdhury et al [7] built a NOR operator. Designed circuits were simulated in HSPICE using 180nm library.…”

Section: Related Workmentioning

confidence: 99%

A New Multi-Valued Logic Buffer and Inverter Using MOSFET Based Differential Amplifier

Mokhtari

Kabiri

2022

IJE

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The aim of this work is to assist the design of decenary Multi-Valued Logic (MVL) circuits. This paper reports a work, in which, analog voltage-based circuitry is used to design MVL circuits. In this paper, some analog circuits are reported as elements that can be used in Multi-Valued Logic (MVL) circuitry. This article reported a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-Based Differential Amplifier (MBDA) as a key element in designing decenary MVL arithmetic unit. Operating voltage range and linearity of the gain are two important characteristics of this element. The operating voltage range for the MBDA is 0V to 5.5V as a output voltage.The achieved linear gain is within the range of 0.1V to 5.3V. Analog inverter and correction buffer circuits are reported based on MBDA. Analog inverter will be used in computational and logical decenary MVL circuits. The correction buffer is designed as an element to eliminate noises and signal drift at the output of the MVL gates and throughout data transfer.

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