Design of high temperature gate driver for SiC MOSFET for EV motor drives

Wang, Hanxiang; Jiang, Dong

doi:10.1109/itec-ap.2017.8080762

Cited by 8 publications

References 5 publications

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“…The total current magnification of TTL push-pull circuit is the product of the amplification factors of all magnification circuits. Considering that the BJT current magnification will be reduced when working in the switching state, the isolated driver requires at least two push-pull drive circuits [18]. The principle of multi-level TTL push-pull drive circuit will be introduced in Section 4.…”

Section: Structure Of Isolated Gate Drivermentioning

confidence: 99%

“…Si discrete device has much smaller leakage current than transistor in IC under the same voltage as a result of its larger volume and better HT resistance thanks to its lower thermal impedance. These features make Si discrete device another good choice for HT isolated gate driver under current conditions [10][11][12][13][14][15][16][17][18][19][20][21][22][23]. In [16] and [17], the conventional magnetic coupling isolation method is applied.…”

Section: Introductionmentioning

confidence: 99%

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Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET

Jiang

Wang

et al. 2022

IET Power Electronics

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The high temperature (HT) characteristics of silicon carbide (SiC) devices enable power electronic converters to operate at higher ambient temperature, and the importance of HT isolated gate drivers is becoming increasingly significant. Compared with the complex silicon on insulator (SOI) HT chips and normal silicon (Si) ICs, the Si‐based discrete devices can well balance the temperature capability and design cost. A feasible isolated gate driver design method is proposed in this paper by using discrete MOSFETs, discrete BJTs and other passive components with consideration of cost and can be with less leakage current than normal integrated circuits. The function of gate driver includes signal isolation and signal amplification. In the signal isolation part, a CMOS‐based isolation circuit is proposed with its merits. In the signal amplification part, normal topologies are improved to get better efficiency and high‐speed capability. SiC power module‐based double pulse test is used to verify the switching performance, and experiments are done to verify the continuous operating capability. The main factors which affect the performance of the proposed isolated gate driver are summarized. This technology provides a novel solution for SiC MOSFET gate driver in HT environment.

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Section: Structure Of Isolated Gate Drivermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET

Jiang

Wang

et al. 2022

IET Power Electronics

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“…In recent years, the silicon carbide (SiC) power semiconductor has emerged as an attractive alternative for silicon (Si) devices [1][2][3][4][5] . Some manufacturers have successfully developed SiC metal-oxide-semiconductor field-effect transistor (MOSFET) products, which have demonstrated high blocking voltage, high switching frequency, and high temperature abilities.…”

Section: Introduction1mentioning

confidence: 99%

“…Although the advanced properties of SiC MOSFET will lead converters to higher power densities, it is challenging to increase the current rating and reduce the cost in a short time [5] . Cost comparisons between SiC MOSFET and Si insulatedgate bipolar transistors (IGBT) with the same ratings are listed in Tab.…”

Section: Introduction1mentioning

confidence: 99%

Review of Si IGBT and SiC MOSFET based on hybrid switch

Ning¹,

Yuan²,

Kang³

et al. 2019

Chin. J. Electr. Eng.

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SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.

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Design of high temperature gate driver for SiC MOSFET for EV motor drives

Cited by 8 publications

References 5 publications

Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET

Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET

Review of Si IGBT and SiC MOSFET based on hybrid switch

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