Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

“…The commonly used parallel electric field-dependent mobility model, the Auger recombination model, the Shockley-Read-Hall model, and the impact ionization model were adopted to obtain the current-voltage (I-V ) curve and electric field distribution of the SBDs. [25] In addition, a universal phonon-assisted tunneling model was defined at the anode region. The key mate-rial parameters of diamond and Ga 2 O 3 [26] in the simulations are shown in Table 1.…”