Design of a C-Band CMOS class AB power amplifier for an ultra low supply voltage of 1.9 V

Carls, J.; Eickhoff, Ralf; Sakalas, P.; Mark, S. von der; Wehrli, Silvan

doi:10.1109/imoc.2007.4404376

Cited by 7 publications

(3 citation statements)

References 1 publication

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“…To demonstrate all three application scenarios, as well as their security levels, a single-stage single-transistor Class AB power amplifier is investigated as our first example where we assume that the inductor is using the metal6 layer and the capacitors are using metal5 and metal6 layers [18]. A more sophisticated example with detailed layout information will be introduced in Section 5.…”

Section: The First Examplementioning

confidence: 99%

Beyond the Interconnections: Split Manufacturing in RF Designs

Yuan

Jin

2015

Electronics

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With the globalization of the integrated circuit (IC) design flow of chip fabrication, intellectual property (IP) piracy is becoming the main security threat. While most of the protection methods are dedicated for digital circuits, we are trying to protect radio-frequency (RF) designs. For the first time, we applied the split manufacturing method in RF circuit protection. Three different implementation cases are introduced for security and design overhead tradeoffs, i.e., the removal of the top metal layer, the removal of the top two metal layers and the design obfuscation dedicated to RF circuits. We also developed a quantitative security evaluation method to measure the protection level of RF designs under split manufacturing. Finally, a simple Class AB power amplifier and a more sophisticated Class E power amplifier are used for the demonstration through which we prove that: (1) the removal of top metal layer or the top two metal layers can provide high-level protection for RF circuits with a lower request to domestic foundries; (2) the design obfuscation method provides the highest level of circuit protection, though at the cost of design overhead; and (3) split manufacturing may be more suitable for RF designs than for digital circuits, and it can effectively reduce IP piracy in untrusted off-shore foundries.

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Section: The First Examplementioning

confidence: 99%

Beyond the Interconnections: Split Manufacturing in RF Designs

Yuan

Jin

2015

Electronics

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“…Furthermore, the architecture is optimized with respect to its tuning range over the complete ISM band, its power consumption, and its phase noise characteristics. Feeding the antenna in the sensor node is performed by an additional power amplifier that uses integrated smart power management [4].…”

Section: Synthesizer Designmentioning

confidence: 99%

Highly Integrated Fractional-n Synthesizer for Locatable Wireless Sensor Nodes

Ußmüller

Weigel

Eickhoff

2009

2009 IEEE International Conference on Communications

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Local positioning systems significantly enhance the value of wireless sensor networks (WSN). This paper presents an integrated synthesizer for localization using frequency modulated continuous wave (FMCW) radar. The synthesizer is based on a fractional-n phase-locked loop (PLL) architecture. All components of the PLL are carefully designed with respect to their power consumption, and the digital parts are implemented in current-mode logic (CML). The complete synthesizer was manufactured in a 0.18 µm SiGe BiCMOS process from IBM, and it consumes only 100 mW, achieves a phase noise better than -117 dBc/Hz and has a silicon area of 1.15 mm 2 . Due to its high integration level and its optimized design, the synthesizer achieves low power consumption and low phase noise that make it suitable for precise localization in mobile sensor nodes. Localization measurements in indoor environments with multipath propagation showed mean distance errors about 10 cm.

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“…The power consumption, form factors and costs of positioning systems can be decreased by using silicon integrated circuits [21]. In the framework of RESOLUTION, radio frequency integrated circuits (RFICs) optimized for positioning sensors are designed in 0.18 µm BiCMOS technology [22][23][24][25]. Corresponding results of first prototypes are included in Sections V and VI.…”

Section: Introductionmentioning

confidence: 99%

Local Positioning for Wireless Sensor Networks

Ellinger¹,

Eickhoff²,

Gierlich

et al. 2007

2007 IEEE Globecom Workshops

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This workshop paper gives an overview of local positioning and tracking principles for wireless sensor networks including recent results of the European project RESOLUTION (Reconfigurable Systems for Mobile Local Communication and Positioning). Measurements of a first demonstrator applying a frequency modulated continuous wave (FMCW) radar principle are presented. The unlicensed ISM band around 5.8 GHz, 150 MHz bandwidth and less than 25mW effective isotropic radiated transmit power are used. Excellent 3-D positioning accuracies in the order of 4 cm in an anechoic chamber and 18 cm in a conference hall with strong multipath and area of 800 m 2 are measured. Furthermore, the results of optimized radio frequency integrated circuits and a suitable compact flash card are outlined.

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Design of a C-Band CMOS class AB power amplifier for an ultra low supply voltage of 1.9 V

Cited by 7 publications

References 1 publication

Beyond the Interconnections: Split Manufacturing in RF Designs

Beyond the Interconnections: Split Manufacturing in RF Designs

Highly Integrated Fractional-n Synthesizer for Locatable Wireless Sensor Nodes

Local Positioning for Wireless Sensor Networks

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