Design of a 7-bit Flash AD Converter for M-Sequence UWB Sensor Systems

Sokol, Miroslav; Galajda, Pavol

doi:10.1109/radioelektronika52220.2021.9420197

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…In the case of positive supply only, the input impedance is tied to the supply VCC and coupled to GND through the bypass capacitors in the circuit, which can cause different unwanted crosstalk and current loops in the circuit. The input matching type II was used in the input amplifier for the clock signal in the designed 7-bit ADC [22].…”

Section: R Rmentioning

confidence: 99%

“…Applications of UWB sensor systems based on the M-sequence that have been developed include, for example, ground penetrating radars [13,14], locating and searching for persons behind obstacles and walls [15], locating general objects or use of robots [16], in the field of non-invasive diagnostics and condition detection in medicine [17], and material reflectometry [18,19]. New circuit structures have also been developed for UWB sensor systems, such as transceivers [20,21], wideband couplers [18], and AD converters [22]. With the development of the new circuits came the need to design additional differential amplifiers directly for these purposes and specific implementations.…”

Section: Introductionmentioning

confidence: 99%

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Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications

Sokol,

Galajda,

Jurik

2024

Sensors

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Amplification of wideband high-frequency and microwave signals is a fundamental element within every high-frequency circuit and device. Ultra-wideband (UWB) sensor applications use circuits designed for their specific application. The article presents the analysis, design, and implementation of ultra-wideband differential amplifiers for M-sequence-based UWB applications. The designed differential amplifiers are based on the Cherry–Hooper structure and are implemented in a low-cost 0.35 µm SiGe BiCMOS semiconductor process. The article presents an analysis and realization of several designs focused on different modifications of the Cherry–Hooper amplifier structure. The proposed amplifier modifications are focused on achieving the best result in one main parameter’s performance. Amplifier designs modified by capacitive peaking to achieve the largest bandwidth, amplifiers with the lowest possible noise figure, and designs focused on achieving the highest common mode rejection ratio (CMRR) are described. The layout of the differential amplifiers was created and the chip was manufactured and wire-bonded to the QFN package. For evaluation purposes, a high-frequency PCB board was designed. Schematic simulations, post-layout simulations, and measurements of the individual parameters of the designed amplifiers were performed. The designed and fabricated ultra-wideband differential amplifiers have the following parameters: a supply current of 100–160 mA at −3.3 V or 3.3 V, bandwidth from 6 to 12 GHz, gain (at 1 GHz) from 12 to 16 dB, noise figure from 7 to 13 dB, and a common mode rejection ratio of up to 70 dB.

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Section: R Rmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications

Sokol,

Galajda,

Jurik

2024

Sensors

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“…These pseudo-noise radars have been used in many applications, like nondestructive testing tasks in industrial and civil engineering [5], non-invasive medicine diagnostics, and vital sign detection in medical engineering [11], indoor person localization, search and rescue operations [12], and many others. For these applications, a lot of ASIC circuits have been designed and implemented, such as in [6,[13][14][15].…”

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confidence: 99%

Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications

Jurik,

Sokol,

Galajda

et al. 2023

Sensors

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All ultra-wideband (UWB) sensor applications require hardware designed directly for their specific application. The switching of broadband radio frequency and microwave signals is an integral part of almost every piece of high-frequency equipment, whether in commercial operation or laboratory conditions. The trend of integrating various circuit structures and systems on a chip (SoC) or in a single package (SiP) is also related to the need to design these integrated switches for various measuring devices and instruments in laboratories, paradoxically for their further development. Another possible use is switching high-frequency signals in telecommunications devices, whether mobile or fixed networks, for example, for switching signals from several antennas. Based on these requirements, a high-frequency semiconductor integrated switch with NMOS transistors was designed. With these transistors, it is possible to achieve higher integration than with bipolar ones. Even though MOSFET transistors have worse frequency characteristics, we can compensate them to some extent with the precise design of the circuit and layout of the chip. This article describes the analysis and design of a high-frequency semiconductor integrated switch for UWB applications consisting of three series-parallel switches controlled by CMOS logic signals. They are primarily intended for UWB sensor systems, e.g., when switching and configuring the antenna MIMO system or when switching calibration tools. The design of the switch was implemented in low-cost 0.35 µm SiGe BiCMOS technology with an emphasis on the smallest possible attenuation and the largest possible bandwidth and isolation. The reason for choosing this technology was also that other circuit structures of UWB systems were realized in this technology. Through the simulations, individual parameters of the circuit were simulated, the layout of the chip was also created, and the parameters of the circuit were simulated with the parasitic extraction and the inclusion of parasitic elements (post-layout simulations). Subsequently, the chip was manufactured and its parameters were measured and evaluated. Based on these measurements, the designed and fabricated UWB switch was found to have the following parameters: a supply current of 2 mA at 3.3 V, a bandwidth of 6 GHz, an insertion loss (at 1 GHz) of −2.2 dB, and isolation (at 1 GHz) of −33 dB, which satisfy the requirements for our UWB sensor applications.

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