Design for high energy storage density and temperature-insensitive lead-free antiferroelectric ceramics

Luo, Nengneng; Han, Kai; Zhuo, Fangping; Liu, Laijun; Chen, Xiyong; Peng, Biaolin; Wang, Xinpeng; Feng, Qin; Wei, Yuezhou

doi:10.1039/c8tc06549g

Cited by 178 publications

(57 citation statements)

References 57 publications

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“…4). Compared with state-of-the-art lead-free bulk ceramics 17,20,24,25,29,[40][41][42][43][44][45][46][47][48][49] , the ANT55 exhibits more attractive energy storage performance with both high energy storage density and efficiency, as shown in Fig. 4d.…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, a relatively high W rec of 1.5–2.0 J cm −3 was obtained in AN, with an efficiency only around 38% 20 , 21 . Numerous attempts have been made on A-site 22 – 24 , B-site 25 , 26 , and A/B-site 27 , 28 chemical modifications with the idea to shift the highly stable AFE M2 phase to RT, where P–E loop with small P r and reduced hysteresis have been achieved (Fig. 1c ), exhibiting good energy storage densities varying in the range of 2.5–4.5 J cm −3 and efficiency of 55–69%.…”

Section: Introductionmentioning

confidence: 99%

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Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency

et al. 2020

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Dielectric capacitors with high energy storage density (Wrec) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high Wrec of 6.3 J cm-3 with η of 90% can be simultaneously achieved by constructing a room temperature M2–M3 phase boundary in (1-x)AgNbO3-xAgTaO3 solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20–150 °C and excellent cycling reliability up to 106 cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency

et al. 2020

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“…Luo et al [ 75 ] obtained a P max of 39.6 μC·cm −2 , an E b of 220 kV·cm −1 and a W rec of 3.55 J·cm −3 in Ag 0.92 Ca 0.04 NbO 3 ceramics by conducting a solid-phase reaction at a temperature of 1350

Compared with Ag + (1.48 Å, CN = 12), Ca 2+ (1.34 Å, CN = 12) possesses a much smaller ionic radius [ 3 , 76 ]. The substitution of Ag + by bivalent Ca 2+ cations created silver vacancies and enhanced polarization, stabilized AFE phase, increased E F and E A , decreased E F - E A , and reduced grain size to increase E b ( Figure 13 ).…”

Section: Design Of a Lead-free Ferroelectric Materials With High Ementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

et al. 2021

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Dielectric capacitors are widely used in pulse power systems, electric vehicles, aerospace, and defense technology as they are crucial for electronic components. Compact, lightweight, and diversified designs of electronic components are prerequisites for dielectric capacitors. Additionally, wide temperature stability and high energy storage density are equally important for dielectric materials. Ferroelectric materials, as special (spontaneously polarized) dielectric materials, show great potential in the field of pulse power capacitors having high dielectric breakdown strength, high polarization, low-temperature dependence and high energy storage density. The first part of this review briefly introduces dielectric materials and their energy storage performance. The second part elaborates performance characteristics of various ferroelectric materials in energy storage and refrigeration based on electrocaloric effect and briefly shed light on advantages and disadvantages of various common ferroelectric materials. Especially, we summarize the polarization effects of underlying substrates (such as GaN and Si) on the performance characteristics of ferroelectric materials. Finally, the review will be concluded with an outlook, discussing current challenges in the field of dielectric materials and prospective opportunities to assess their future progress.

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“…The AFE phase can be transformed to the FE phase when the dc bias field is above the threshold electric field (E AF ), and return to the AFE state when decreased to the threshold electric field (E FA ) [5]. Meanwhile, the field-induced phase transition is known to bring about abrupt changes in macroscopic properties such as volume and dielectric constant, therefore AFEs is regarded as potential tunable materials, especially lanthanum-modified PZT known as PLZST [6,7].…”

Section: Introductionmentioning

confidence: 99%

Enhanced dielectric and tunable properties of Ba-doped (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric ceramics

Wang

Cai

Xiao

et al. 2020

J Mater Sci: Mater Electron

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In this work, a simple method to improve the dielectric tunability of antiferroelectric ceramics was introduced, and (Pb 0.97−x La 0.02 Ba x)(Zr 0.50 Sn 0.40 Ti 0.10)O 3 (x = 0.08, 0.09, 0.10) antiferroelectric ceramics were prepared by conventional solidstate route. The effect of Ba-modification on phase structure and electric properties was systematically investigated. The results revealed that the barium content contributed to the decline of the Curie temperature and enhanced dielectric tunable performance. All compositions exhibited butterfly curve, and a high tunability of 48.89% at E AF and 53.02% at E FA was obtained in (Pb 0.87 La 0.02 Ba 0.10)(Zr 0.50 Sn 0.40 Ti 0.10)O 3. In addition, the ε max /ε min ratio was up to 25.32, making it a promising candidate for nonlinear tunable devices.

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Design for high energy storage density and temperature-insensitive lead-free antiferroelectric ceramics

Abstract: High energy density was achieved by designing a AgNbO3 based lead-free system.

Cited by 178 publications

References 57 publications

Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency

Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency

Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

Enhanced dielectric and tunable properties of Ba-doped (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric ceramics

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