With the ever decreasing feature sizes of modern integrated circuits (IC), new test and analysis approaches are needed to isolate dominant soft error rate (SER) susceptibilities. A new test capability which provides SER raster scanning of microcircuits with a collimated heavy-ion beam, having spatial isolation as small as 10 microns, is presented. The system termed the Milli-Beam TM provides, through post processing, three-dimensional surface plots showing the location of error counts over an entire IC. A new cross section measurement technique that accounts for beam variations and uncertainties independent of laboratory dosimetry is also presented.