Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Nicholls, Jordan R.; Dimitrijev, Sima; Tanner, Philip; Han, Jisheng

doi:10.1038/s41598-019-40287-1

Cited by 37 publications

(45 citation statements)

References 23 publications

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“…where ℎ ( − ) is the number of hits per unit area, unit time, and unit energy. Taking into account the density-ofstates distribution with energy, the Fermi-Dirac distribution for the probability of state occupancy, and assuming that electrons move randomly in all directions, we have derived the following equation for ℎ ( − ) in a recently published paper [14]:…”

Section: Metal-to-semiconductor Currentmentioning

confidence: 99%

“…(4), ( − ) = 1 for the case of thermionic emission, when − > + . Regarding the tunneling mechanism, we used the Wentzel-Kramers-Brillouin approximation to derive the following equation for − < + [14]:…”

Section: Metal-to-semiconductor Currentmentioning

confidence: 99%

“…This means that the zero level for both the thermal velocity and the density of states, which corresponds to − = 0, is at in the case of semiconductor. Accordingly, the energy term in the Fermi-Dirac distribution is no longer just 0 is the barrier height without the image-force effect at = 0 (a voltageindependent parameter), is the number of near-interface traps per unit area in the energy range between the quasi-Fermi levels, and is the distance of the near-interface traps from the metal surface [14].…”

Section: Semiconductor-to-metal Currentmentioning

confidence: 99%

“…What happens then is that the excess flow of electrons from the metal into the semiconductor, when → > → , is lifting the bands to reduce the barrier height for the thermionic emission of electrons from the semiconductor and to reach the condition → = → . This band bending is equivalent to the following shift in the semiconductor quasi-Fermi level with respect to [14]:…”

Section: Thermal Equilibriummentioning

confidence: 99%

“…Reducing the barrier height in Eq. (14) by this value leads to the following equation for the semiconductor-to-metal current:…”

Section: Thermal Equilibriummentioning

confidence: 99%

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The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Dimitrijev

Nicholls

Tanner

et al. 2019

2019 IEEE 31st International Conference on Microelectronics (MIEL)

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In this paper, we derive the equations for the current-voltage characteristics of SiC Schottky barrier diodes from the fundamental physics of thermionic emission and tunneling, as the two fundamental current mechanisms. An excellent fit between the model and the experimental data is achieved without the need for empirical fitting parameters, such as the commonly used ideality factor, and with a single set of physically meaningful parameters. This result shows that the current transport in the measured SiC Schottky diodes is not dominated by defects.S. Dimitrijev and J. Nicholls are with Queensland Micro-and Nanotechnology Centre, and with the School

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Section: Metal-to-semiconductor Currentmentioning

confidence: 99%

Section: Metal-to-semiconductor Currentmentioning

confidence: 99%

Section: Semiconductor-to-metal Currentmentioning

confidence: 99%

Section: Thermal Equilibriummentioning

confidence: 99%

“…Reducing the barrier height in Eq. (14) by this value leads to the following equation for the semiconductor-to-metal current:…”

Section: Thermal Equilibriummentioning

confidence: 99%

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The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Dimitrijev

Nicholls

Tanner

et al. 2019

2019 IEEE 31st International Conference on Microelectronics (MIEL)

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Evolution of Reverse‐Biased Current of a Barristor Junction by Varying Temperature and Barrier Height of the Junction

Choi

Jeong

Kim

et al. 2022

Adv Elect Materials

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The reverse‐biased current of a Schottky junction comprises the thermionic emission current and the Fowler–Nordheim tunneling current, depending on the barrier height and thickness. Because both are fixed at traditional Schottky junctions, so is the current mechanism. However, a barristor junction has a tunable barrier height and the current mechanism changes accordingly. Here, the evolution of the current mechanism of the graphene–WS2 junction is investigated by varying the gate voltage, drain voltage, and temperature. As the height decreases with the accumulation of electrons on graphene, the dominant transport mechanism of the junction changes from thermionic to field emission. As the temperature increases, the extrinsic carrier concentration of WS2 increases and thus the thickness decreases, resulting in the same evolution. In addition, a kink in the ID–VD curves over a specific range of gate voltages and temperatures is observed. This may originate from the alignment of the Fermi level of graphene to the Dirac point, which dramatically reduces the Fowler–Nordheim tunneling current.

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Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

Dou

Hellenbrand

Xiao

et al. 2023

Adv Elect Materials

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With their recent advances in memory and neuromorphic computing applications, resistive random-access memory (RRAM) emerges as one of the most promising electronic devices to change computational data management. The neuromorphic computing enabled by RRAMs provides viable solution to overcoming the limitations of the von-Neumann bottleneck for next-generation memory and computing applications. [1] As one type of RRAM, valence change memory made of oxides has numerous merits including large ON/OFF ratio, excellent endurance/retention, high switching speed, and simple fabrication. [2][3][4] Resistive switching (RS) in valence change memory is often realized by the change of electronic states of cations related to oxygen vacancies. Over the years, RS has been widely reported in many simple binary oxides (TiO 2 , [1,[5][6][7] HfO 2 , [8][9][10] CeO 2 , [11][12][13] and SiO 2 , [14,15] ) and ternary oxides Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, "random network," "columnar scaffold," and "island-like," are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with "columnar scaffold" morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a "columnar scaffold" morphology further confirms the contribution from grain boundaries. In contrast, the "random network" or "island-like" structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide-based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Cited by 37 publications

References 23 publications

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Evolution of Reverse‐Biased Current of a Barristor Junction by Varying Temperature and Barrier Height of the Junction

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Cited by 37 publications

References 23 publications

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Evolution of Reverse‐Biased Current of a Barristor Junction by Varying Temperature and Barrier Height of the Junction

Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

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Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties