MRS Proc. 2000 DOI: 10.1557/proc-610-b6.8 View full text
Lin Shao, Xinming Lu, Jianyue Jin, Qinmian Li, Irene Rusakova, Jiarui Liu, Wei-Kan Chu

Abstract: AbstractWe have studied boron profiles by using the ion beam recoil implantation. A boron layer was first deposited onto Si, followed by irradiation with Si ions at various energies to knock the boron. Conventional belief is that the higher the implantation energy, the deeper the recoil profiles. While this is true for low-energy incident ions, we show here that the situation is reversed for incident Si ions of higher energy due to the fact that recoil probability at a given angle is a strong function of the e…

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