Deposition of transistion metal Mn doped BTO thin films by sol–gel technique

Roselin, A. Amali; Anandhan, N.; Dharuman, Venkataraman

doi:10.1007/s10854-018-9309-4

Cited by 5 publications

(2 citation statements)

References 38 publications

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“…Optical conductivity (σ opt ) indicates the optical absorption and has a relationship with α and n . The σ opt can be expressed as follows − : σ opt = α n c 4 π where c stands for the speed of light. Figure presents the variation in the optical conductivity (σ opt ) with the photon energy.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Interfacial InSe Thin Film

Emir,

Tataroglu,

Coşkun

et al. 2024

ACS Omega

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This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV–vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV–vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (E g), refractive index (n), absorption coefficient (α), and optical conductivity (σopt). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.

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Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Interfacial InSe Thin Film

Emir,

Tataroglu,

Coşkun

et al. 2024

ACS Omega

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“…and co-substituted BTO thin films. [19][20][21] However, only a few pieces of literature have been available on bismuth titanate doped with Dysprosium in the form of thin-film using sol-gel.…”

Section: Introductionmentioning

confidence: 99%

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor

Roselin

Rajendran

Panneerdoss³

et al. 2021

ChemistrySelect

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Heavy metals are highly polluting the environment and are considered a serious concern. As a result, early detection of these heavy metals is critical. In this research work, we focus on a new electrochemical sensor based on rare earth element (Dysprosium, Dy) modified with Aruvillius layered Perovskite (Bismuth titanate, Bi 4 Ti 3 O 12 , BTO) thin film electrodes with different concentrations of (0, 2 %, 4 %, 6 %) Dysprosium (Dy)was prepared using the sol-gel spin coating method for mercury (Hg 2 + ) ions detection.The X-ray diffraction analysis reveals the prepared sample exhibits a polycrystalline orthorhombic structure. The highest emission peak at 575 nm is discerned in the more visible region corresponding to the transition of 4F 9/2 !6H 3/2 . In the X-ray photoelectron spectro-scopy analysis, the existence of Bi, Ti, O, and Dy is demonstrating the successful formation of prepared material. In the electrochemical section, various parameters such as pH, scan rate, and different concentrations of (Hg 2 + ) ions were investigated. From the Cyclic Voltammetry and Electrochemical Impedance analysis, 4 % Dy doped BTO has been identified as an active electrochemical participant and has low charge transfer resistance. The stability analysis result shows the better stability of the electrode during the cycling for sensing application with a lower detection limit of 1.27 μM. It indicated that the modified 4 % Dy doped BTO thin film electrode can be explored for real-time analysis.

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Microstructure and ferroelectric properties of bi-excess Bi₄Ti₃O₁₂ thin films grown on Si and Pt/Ti/SiO₂/Si substrates

Liu

Fan

et al. 2020

Ferroelectrics

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Deposition of transistion metal Mn doped BTO thin films by sol–gel technique

Cited by 5 publications

References 38 publications

Structural and Optical Properties of Interfacial InSe Thin Film

Structural and Optical Properties of Interfacial InSe Thin Film

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor

Microstructure and ferroelectric properties of bi-excess Bi₄Ti₃O₁₂ thin films grown on Si and Pt/Ti/SiO₂/Si substrates

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Deposition of transistion metal Mn doped BTO thin films by sol–gel technique

Cited by 5 publications

References 38 publications

Structural and Optical Properties of Interfacial InSe Thin Film

Structural and Optical Properties of Interfacial InSe Thin Film

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi4‐xDyxTi3O12) Electrode for Mercury Ions Sensor

Microstructure and ferroelectric properties of bi-excess Bi4Ti3O12 thin films grown on Si and Pt/Ti/SiO2/Si substrates

Contact Info

Product

Resources

About

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor

Microstructure and ferroelectric properties of bi-excess Bi₄Ti₃O₁₂ thin films grown on Si and Pt/Ti/SiO₂/Si substrates