Deposition of nickel oxide by direct current reactive sputtering

Karpinski, A.; Ferrec, A.; Richard‐Plouet, Mireille; Cattin, Linda; Djouadi, M.A.; Brohan, Luc; Jouan, Pierre-Yves

doi:10.1016/j.tsf.2011.12.068

Cited by 40 publications

(29 citation statements)

References 29 publications

(27 reference statements)

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“…Initially, the peak target current decreases as more nitrous oxide is introduced. This can be attributed to the decreasing plasma density in front of the target and thus decreasing plasma conductivity [79][80][81], and to reduced secondary electron emission from silicon suboxides [62], limiting the current that can be drawn to the cathode. After a certain threshold the peak current starts increasing, indicating poisoned target surface conditions, because the secondary electron emission yield from completely oxidized silicon surface is higher than that from clean silicon or suboxides.…”

Section: Hipims In Oxygen-containing Atmospheresmentioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Section: Hipims In Oxygen-containing Atmospheresmentioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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“…On the other hand, transition metal oxides semiconducting materials such as MoO 3 , WO 3 and NiO have great potential application in microelectronics and optoelectronics [4][5][6][7][8][9][10][11][12][13][14][15]. Among them, nickel oxide (NiO) has specific properties and diverse applications.…”

Section: Introductionmentioning

confidence: 99%

“…Among them, nickel oxide (NiO) has specific properties and diverse applications. The properties of NiO thin films which make it suitable for the different applications are excellent durability, low material cost, wide optical band gap, excellent electrical and optical properties [7][8][9][10][11][12][13]. NiO thin films can be applied in electrochromic display devices, gas sensors, positive electrode in Li-ion batteries [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…The properties of NiO thin films which make it suitable for the different applications are excellent durability, low material cost, wide optical band gap, excellent electrical and optical properties [7][8][9][10][11][12][13]. NiO thin films can be applied in electrochromic display devices, gas sensors, positive electrode in Li-ion batteries [5][6][7][8][9][10]. Several techniques have been used to prepare NiO thin films, including pulsed laser deposition [5], plasma oxidation [7], DC and RF magnetron sputtering [8][9][10][11][12], sol-gel [13,14] and so on.…”

Section: Introductionmentioning

confidence: 99%

“…NiO thin films can be applied in electrochromic display devices, gas sensors, positive electrode in Li-ion batteries [5][6][7][8][9][10]. Several techniques have been used to prepare NiO thin films, including pulsed laser deposition [5], plasma oxidation [7], DC and RF magnetron sputtering [8][9][10][11][12], sol-gel [13,14] and so on. In addition to these preparation methods, NiO films can also be prepared by thermal oxidation of nickel film [16].…”

Section: Introductionmentioning

confidence: 99%

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Structural, electrical, and decorative properties of sputtered zirconium thin films during post-annealing process

2013

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Silver (Ag) nanolayers were deposited on nickel oxide (NiO) thin films by DC magnetron sputtering. The thickness of Ag layers was in range of 20-80 nm by variation of deposition time between 10 and 40 s. X-ray diffraction results showed that the crystalline properties of the Ag/NiO films improved by increasing the Ag film thickness. Also, atomic force microscopy and field emission scanning electron microscopy images demonstrated that the surface morphology of the films was highly affected by film thickness. The film thickness and the size of particles change by elevating the Ag deposition times. The composition of films was determined by Rutherford back scattering spectroscopy. The transmission of light was gradually reduced by augmentation of Ag films thickness. Furthermore; the optical band gap of the films was also calculated from the transmittance spectra.

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Enhancing the Oxygen Evolution Reaction Activity of Sputtered Ni, NiO, and NiNiO Thin Films by Incorporating Fe

Heath,

Potgieter,

Seland

et al. 2024

ChemElectroChem

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The effect of Fe‐containing alkaline electrolyte, on the oxygen evolution reaction (OER) activity of Ni electrocatalysts, has long been of interest as Fe increases the OER activity of Ni electrocatalysts. However, controversy exists as to whether it is surface or bulk Fe that is responsible for the increased activity. In this study, magnetron sputtering was employed to sputter Ni, NiO and NiNiO thin film electrocatalysts to study the effect that different concentrations of Fe in the electrolyte have on their OER activities. It was found that increasing concentrations of Fe increasingly enhanced the OER activity of these thin film electrocatalysts until the electrolyte was saturated with Fe. The lowest overpotential achieved is 279 mV (at 10 mA cm−2) for NiNiO cycled in KOH containing 1 mM Fe, with all three thin film electrocatalysts exhibiting overpotentials within the same range after 30 voltammetry cycles in 0.9 ppm Fe and 1 mM Fe. All Tafel slopes are between 36 and 45 mV dec−1 indicating similar kinetics for the samples cycled in different Fe concentrations. Energy‐dispersive X‐ray spectroscopy and X‐ray photoelectron spectroscopy results show that Fe is found in the top layers of the electrocatalysts after cycling.

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Deposition of nickel oxide by direct current reactive sputtering

Cited by 40 publications

References 29 publications

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Structural, electrical, and decorative properties of sputtered zirconium thin films during post-annealing process

Enhancing the Oxygen Evolution Reaction Activity of Sputtered Ni, NiO, and NiNiO Thin Films by Incorporating Fe

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