Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

Topological Insulator Films for Terahertz Photonics

“…It is known that in binary systems Bi(Sb)–Se(Te) there are different phases of the homologous series m Bi(Sb) 2· n Bi 2 Se(Te) 3, where m and n are a number of Bi 2 , Sb 2 and Bi 2 Se 3 or Sb 2 Te 3 blocks per unit cell. In a series of works by one of the authors of this work, the phase composition of films deposited at different temperatures was studied in detail in growth systems: trimethyl bismuth (BiMe 3 )—isopropyl selenide (iPro 2 Se)—hydrogen [ 39 ], trimethyl bismuth—diethyl telluride (Et 2 Te)—hydrogen [ 40 ] and trimethyl antimony (SbMe 3 )—diethyl telluride—hydrogen [ 41 ] on the (0001) sapphire substrates. It was shown by methods of X-ray diffraction and energy-dispersive X-ray spectroscopy that at temperatures higher than 440 °C, rhombohedral epitaxial films of the corresponding binary compounds are deposited with m = 0 и n = 1.…”

MOCVD deposition of zinc and bismuth chalcogenides films on the surface of silica optical fibres

“…1. sition of bismuth chalcogenides by MOCVD (up to 40 in the case of Bi 2 Se 3 ) are necessary in order to realize films with Bi 2 Se 3 , Bi 2 Te 3 stoichiometry and to avoid the deposition of numerous phases of the homologous series nBi 2 •mBi 2 Se 3 and nBi 2 •mBi 2 Te 3 , where n and m are integers [17,18].…”

“…Therefore, to form thin continuous films, it is necessary to neutralize the free bonds on the substrate surface. For this, a number of approaches are used; in particular, a two-stage process of low-temperature nucleation [19] and deposition of buffer layers of various selenides, including ZnSe [17] and ZnTe [18]. As we noted above in Section 2, the low temperature MOCVD deposition of Bi 2 Se 3 and Bi 2 Te 3 films leads to the formation of numerous phases with other stoichiometries.…”