Deposition and characterization of cadmium sulfide (CdS) by chemical bath deposition using an alternative chemistry cadmium precursor

Alexander, J. Nicholas; Higashiya, Seiichiro; Caskey, Douglas C.; Efstathiadis, Harry; Haldar, Pradeep

doi:10.1016/j.solmat.2014.02.017

Cited by 58 publications

(29 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Numerous techniques have been used to grow CdS and Cd 1-x Zn x S thin films including dip coating [16], electrodeposition [17], chemical vapor deposition (CVD) [18], aerosol-assisted CVD (AA-CVD) [19][20][21], chemical bath deposition (CBD) [2,8,22,23], spray pyrolysis [24,25], thermal evaporation [26], successive ionic layer and reaction (SILAR) [27], thermolysis [28,29], electrochemical atomic layer epitaxy (ECALE) [11], sol-gel spin coating, [30,31] doctor's blade, [32] and others [14,21,33,34]. Spin coating (SC) is a particularly useful method for the deposition of thin films [35,36].…”

Section: Introductionmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

View full text Add to dashboard Cite

Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

show abstract

Section: Introductionmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

View full text Add to dashboard Cite

show abstract

“…In comparison to other TCOs, transmission is similar, though some of the samples exhibited transmission in the infra-red region that is greater than reported for ITO and AZO, which is beneficial for photovoltaic applications [9,22]. Future directions for this work include investigation of devices on CIGS in comparison with other TCO materials, and use with alternative CdS buffer developed in previous work [8].…”

Section: Discussionmentioning

confidence: 64%

“…The best results obtained to date with trivalent doped ZnO are with aluminum. Aluminum doped zinc oxide has been used as a TCO for CIGS in past record efficiency achieving devices, and also in past studies [7,8]. Most ZnO doped films suffer from transmission loss with high carrier concentrations, particularly in the near-infrared, in relation to similar carrier concentrations of other materials systems, such as ITO and IZO [9].…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Alexander

Sun²,

Sun³

et al. 2015

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

a b s t r a c tThe electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of $5.5 Â 10 À4 ohm-cm, with a mobility $35 cm 2 /V S, and carrier concentrations $3 ⁄ 10 20 cm À3 . The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

show abstract

“…Warstwą buforową tego ogniwa jest zwykle CdS (siarczek kadmu), uzyskany metodą kąpieli chemicznej CBD -Chemical Bath Deposition, bądź metodą rozpylania magnetronowego (sputtering) [2]. Warstwy buforowe w strukturze ogniwa CIGS posiadają kilka wymogów, które należy wziąć pod uwagę.…”

Section: Wprowadzenieunclassified

“…Przy badaniach wykorzystano następujący wariant kąpieli chemicznej [2]: − 366 ml dejonizowanej wody, 62,5 ml wodorotlenku amonu NH4OH (28-30%), − 50 ml siarczanu kadmu (0,015 M CdSO4), − 25 ml tiomocznika (1,5 M NH2CSNH2) w temperaturze 65 °C.…”

Section: Nanoszenie Cienkich Warstw Emitera Cds Na Podłożach Slg/mo/cigsunclassified

Badania Nad Technologią Otrzymywania Cienkich Warstw Emitera Metodą Rozpylania Magnetronowego Dla Zastosowań W Ogniwach Cigs

Pietraszek¹,

Gulkowski²

2017

ZNPRzBiS

View full text Add to dashboard Cite

Cienkowarstwowe ogniwa fotowoltaiczne wykonane na bazie struktury CIGS (mieszaniny pierwiastków miedzi, indu, galu oraz selenu) należą do II generacji ogniw fotowoltaicznych. Wykazują one efektywność na poziomie zbliżonym do ogniw I generacji, lecz ze względu na niższe zużycie materiału, coraz częściej wypierają z rynku ogniwa krzemowe Artykuł przedstawia rezultaty badań dotyczą-cych sposobu otrzymywania warstwy buforowej CdS (siarczku kadmu), zastosowanej w cienkowarstwowych ogniwach fotowoltaicznych typu CIGS. Przyjęto dwa rozwiązania technologii nanoszenia: warstwa okna CdS uzyskana metodą rozpylenia magnetronowego oraz warstwa okna CdS uzyskana metodą kąpieli chemicznej (CBD-Chemical Bath Deposition). Struktura ta powinna posiadać odpowiednią wielkość przerwy energetycznej, która pozwali na większą absorpcję fotonów, a także wymaga się, aby była cienka (mniej niż 100 nm) i jednolita. Warstwy CdS zostały nałożone przez osadzanie w kąpieli chemicznej CBD na szklanych podłożach pokrytych Mo/CIGS (naniesione warstwy metodą sputteringu magnetronowego). Uzyskano dzięki temu warstwę emitera o grubości 80 nm po czasie osadzania 35 minut. Dla porównania warstwy CdS zostały nałożone poprzez sputtering magnetronowy na podłożu Mo/CIGS, uzyskanym tą samą metodą. Następnie oba rozwiązania zostały przebadane pod względem morfologii powierzchni na elektronowym mikroskopie skaningowym, jak również przeprowadzono analizy składu pierwiastkowego warstw. Zarówno jedna, jak i druga metoda prowadzi do otrzymania warstwy emitera CdS dla zastosowań w ogniwach CIGS.

show abstract

Deposition and characterization of cadmium sulfide (CdS) by chemical bath deposition using an alternative chemistry cadmium precursor

Cited by 58 publications

References 12 publications

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Badania Nad Technologią Otrzymywania Cienkich Warstw Emitera Metodą Rozpylania Magnetronowego Dla Zastosowań W Ogniwach Cigs

Contact Info

Product

Resources

About