T. Yamada, T. Nebiki, S. Kishimoto, H. Makino, K. Awai, T. Narusawa, T. Yamamoto
Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 • C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, µ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the µ gradually increases until the thickness reaches 560 nm. …
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