Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Theory and Fundamental Research in Heat Transfer 2013
DOI: 10.1115/ht2013-17116 View full text |Buy / Rent full text

Abstract: Thickness dependent thermal conductivity measurements were made on aluminum nitride (AlN) thin films grown by two methods on the (0001) surfaces of silicon carbide (SiC) and sapphire substrates with differing surface roughness. We find that the AlN layer itself makes a small contribution to the overall thermal resistance. Instead, the thermal boundary resistance (TBR) of 5.1±2.8 m2-K/GW between the AlN and substrate is equivalent to 240 nm of highly dislocated AlN, or 1450 nm of single crystal AlN. An order-of… Show more

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