Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness

Abstract

Indium oxide (InOx) films with a thickness of 10–1100 nm were deposited onto Corning 7059 glass and silica substrates at various substrate temperatures. An unusual decrease of the lateral grain size with increasing substrate temperature during deposition was found. The changes in the conductivity of the films after exposure to ultraviolet light in vacuum and subsequent oxidation in ozone atmosphere were analyzed and related to their structural and morphological properties. It is suggested that the photoreduction and oxidation treatments affect only a thin layer less than 10 nm at the surface of the film, while the minimum bulk conductivity is mainly determined by the structural and morphological properties.

Production and characterization of indium oxide and indium nitride

“…The other two are not considered, since for a high doping level the charge carrier-phonon interaction becomes weaker due to the induced intrinsic defects, as it has been proved by other techniques [10]. The grain potential is not high enough to induce a main effect in the charge carrier transport because the net charge density per charge can easily overpass the barrier potential on the grain boundaries [1]. Figure 4 shows the temperature-dependent behavior of the electrical conductivity measurements and mobility.…”

“…Semiconducting oxides namely, ZnO, SnO 2 , SnO 2 :F, and particularly InO thin films prepared by DC reactive sputtering show high conductivity and high transmittance in the near IR region. Because of these characteristics and other important properties, InO thin films are suitable for technological applications where high transparency in the visible region and high conductivity are required [1], [2], [3]. Indium oxide is a wide-band-gap semiconductor (∼3.7 eV), which exhibits an isolating behavior in the stoichiometric form In 2 O 3 .…”

Temperature-dependent Photoconductance and Optical Properties of In2O3 Thin Films Prepared by Autowave Oxidation

“…In several papers, ultraviolet (UV) irradiation has been shown to affect the resistance of indium oxide films [24][25][26][27][28]. As a result of UV irradiation, the indium oxide films showed a sharp decrease in resistance.…”

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

“…Among the various TCO thin films like ITO, CdO, ZnO, SnO 2, Indium oxide (In 2 O 3 ) has been widely used in flat panel displays, opto-electronic modulators, liquid crystal displays, solar cells, architectural glasses and photovoltaic devices. A variety of electrical properties such as metallic, semiconducting, or insulating behavior can be obtained depending on its stoichiometric form (In 2 O 3 ) 16 . The structural and opto-electrical properties of oxide materials like In 2 O 3 thin films are highly influenced by doping impurities.…”