S. Kishimoto, T. Yamamoto, Y. Nakagawa, K. Ikeda, H. Makino, T. Yamada
The dependence of electrical and structural properties on film thickness was studied on polycrystalline undoped zinc oxide (ZnO) thin films on glass substrates at 200 • C prepared by plasma-assisted electron-beam deposition. The film thickness was varied from 23 to 316 nm. Hall effect measurements for undoped ZnO films showed that while the Hall mobility increased with increasing film thickness up to almost 130 nm, it remains almost constant on further increasing the film thickness (>130 nm). The carrier conc…
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