Superlattices and Microstructures volume 44, issue 2, P173-182 2008 DOI: 10.1016/j.spmi.2008.03.005 View full text
E.C. Niculescu, L.M. Burileanu, A. Radu

Abstract: a b s t r a c tThe density of donor impurity states in a square GaAs-AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of rel…

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