Densities of valence states of amorphous and crystalline III-V and II-VI semiconductors

Shevchik, N. J.; Tejeda, J.; Cardona, M.

doi:10.1103/physrevb.9.2627

Cited by 240 publications

(49 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Such a splitting is expected on the basis of the spin-orbit split ting of the Ga 3d state into the J = 5/2 and J = 3/2 level. From photoemission spectroscopy investigations [27,28]. Thus, we are able to identify the contributions of both spin orbit split levels in the dielec-tric function.…”

Section: Vuv Ellipsometric Analysismentioning

confidence: 98%

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

Esser¹,

Rakel²,

Cobet³

et al. 2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

Spectral ellipsometry is a widely used method for analysing optical properties of materials. In particular electronic interband transitions of many semiconductor materials have been intensively studied employing ellipsometry from the near-infrared to the ultra-violet (UV) spectral range. Electronic excitations involving core-levels, on the other hand, have been a domain of synchrotron based X-ray absorption spectroscopy or electron loss spectroscopy. We apply spectral ellipsometry in the vacuum-UV spectral range to study core level excitations in GaN. The results proof that VUV-ellipsometry is a very versatile tool to obtain information on the p-like component of the density of states (DOS) related to the conduction bands of GaN. Excitations of the 3d core level of Ga are shown to be linked to the partial DOS at the Ga site within the lattice (complementary to the information obtained on nitrogen sites by X-ray absorption at the N1s edge).

show abstract

Section: Vuv Ellipsometric Analysismentioning

confidence: 98%

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

Esser¹,

Rakel²,

Cobet³

et al. 2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Analogous arguments for the anion a r e expected to be less accurate owing to the difficulty in estimating within a point-charge model both the Coulomb and the polarization effects of the charge transferred to the anion (reference (4)). …”

mentioning

confidence: 99%

Bond Charge Model for the Chemical Shift of the Photoemission in Semiconductors

Hübner

Schäfer

1976

Physica Status Solidi (b)

View full text Add to dashboard Cite

“…It is not obvious which of the two classes plays the major part in determining the properties of the electronic ground state. For a quantitative description of the density of states of the diamond-structure semiconductors, starting from an sp 3 hybrid based tight-binding model, interatomic interactions between at least first and second nearestneighbours have to be taken into account (Shevchik, Tejeda & Cardona, 1974).…”

Section: Directional Compton Profilesmentioning

confidence: 99%

Directional Compton profiles, X-ray scattering factors and the one-electron density matrix for diamond, silicon and germanium

Schülke¹,

Krämer²

1979

Acta Cryst Sect A

View full text Add to dashboard Cite

Experimentally determined directional Compton profiles and the X-ray scattering factors f(2,2,2) of crystalline diamond, silicon and germanium are fitted by using a model for the one-electron density matrix containing only interactions between nearest neighbours. It is concluded that such a model is only capable of reproducing the anisotropic properties of the electronic ground state, whereas isotropic ground-state properties require the consideration of intraatomic hybrid-hybrid interactions as well as interatomic interactions between higher-order neighbours.

show abstract

Densities of valence states of amorphous and crystalline III-V and II-VI semiconductors

Cited by 240 publications

References 61 publications

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

Bond Charge Model for the Chemical Shift of the Photoemission in Semiconductors

Directional Compton profiles, X-ray scattering factors and the one-electron density matrix for diamond, silicon and germanium

Contact Info

Product

Resources

About