Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xü, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhiqing; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue

doi:10.1109/led.2014.2359986

Cited by 52 publications

(12 citation statements)

References 19 publications

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“…For practical power switching applications, GaN-based HEMTs are preferred for their normally-OFF (enhanced mode, E-mode) characteristics (V TH > 0 V), which hold inherent advantages, including low-power consumption, enhanced system safety, and simple circuit configurations [270]. Currently, several ways of fabricating E-mode GaN-based HEMTs have been proposed, including the cascode [271], recessed gate [272], fluorine treatment [273], p-type (Al)GaN gate [11], thin barrier [274], interface charge engineering [275], and p-type NiO [276] methods. In this section, the cascode structure, recessed gate, fluorine treatment, and ptype (Al)GaN gate methods are discussed, as summarised in figures 12(b)-(d).…”

Section: Technologies For Normally-off Operationmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Technologies For Normally-off Operationmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…The basic chemistries employed in the III-nitrides dry etching are chlorine based, such as Cl 2 and BCl 3 [57]. Moreover, Ar [52], N [54], H [58] and F [59] based chemistries can also be added to achieve better etching rate, selectivity and surface morphology [60]. Study [57] showed that the etching rate was found to increase with the ICP antenna RF power up to a certain level (e.g., 600 W).…”

Section: Mesa Etchingmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…Alternatively, the utilization of insulated gate structure allows thinning the barrier to its minimum thickness, i.e. complete removal of the barrier layer, resulting in a direct contact of gate dielectric and i-GaN channel layer thus forming a MOSFET structure [27,28]. In this way, a relatively large V th may be achieved.…”

Section: Introductionmentioning

confidence: 99%

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

Jiang

Zhu

Lyu

et al. 2021

Semicond. Sci. Technol.

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In this paper, we present our recent research on the demonstration of normally-OFF operation and high-performance device merits in GaN high electron mobility transistors (HEMTs), which are enabled by the employment of thin-barrier AlGaN/GaN heterostructures. Two types of thin-barrier HEMTs are investigated: one is with a metal-oxide-semiconductor (MOS) gate structure, and the other is with a p-GaN gate stack. The MOSHEMTs feature an as-grown thin-barrier heterostructure with a gate-recess-free fabrication process and a high-k ZrO 2 gate dielectric. Approaches including selective area barrier regrowth and selective area surface passivation are implemented to minimize the access resistance in the MOSHEMTs. For the p-GaN gate HEMTs, a T-shaped Schottky gate contact scheme is employed to realize superior gate stack reliability. Normally-OFF operation with a large threshold voltage ⩾1.5 V, a high maximum drain current ⩾450 mA mm −1 , a steep subthreshold slope ⩽95 mV dec −1 , and negligible hysteresis are achieved in all the demonstrated device structures. Moreover, in analyzing the reported device results with the corresponding heterostructure design, we discuss the benefits and tradeoffs of thin-barrier MOSHEMTs and p-GaN gate HEMTs, respectively.

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Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Cited by 52 publications

References 19 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors

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