Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

Abstract

We demonstrate the growth and fabrication of a semipolar (101¯3¯) InGaN∕GaN green (∼525nm) light emitting diode (LED). The fabricated devices demonstrated a low turn-on voltage of 3.2V and a series resistance of 14.3Ω. Electroluminescence measurements on the semipolar LED yielded a reduced blueshifting of the peak emission wavelength with increasing drive current, compared to a reference commercial c-plane LED. On-wafer measurements yielded an approximately linear increase in output power with drive current, with measured values of 19.3 and 264μW at drive currents of 20 and 250mA, respectively. The external quantum efficiency did not decrease appreciably at high currents. Polarization anisotropy was also observed in the electroluminescence from the semipolar green LED, with the strongest emission intensity parallel to the [12¯10] direction. A polarization ratio of 0.32 was obtained at a drive current of 20mA.

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

“…For lower inclination angles ϑ , i.e. for semi-polar orientations, the overlapping depends on a distance of ϑ from its value (about 34 • ) corresponding to [20,21,23,26,27,29,31] the same polarizations in both the quantum well and the barrier (Fig. 6).…”

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

“…In particular, the inclined (1-10-3) GaN NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN layer that was grown on r-facet nanogrooves formed on m-sapphire substrates after nitridation. In our previously published results, growth of inclined (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN NRs was also observed on the c-plane facets of a-GaN nucleation. 23,24 As a result, we found that the a-GaN nucleation layer plays an important role in the growth along different directions of inclined GaN NRs on nitridated m-sapphire substrates.…”

“…Lee et al AIP Advances 6, 045209 (2016) opposite directions with reference to [11][12][13][14][15][16][17][18][19][20] m-sapp . 22 Thus, the layered growth of films purely in the (1-10-3) orientation has resulted in a rough surface and the degradation of crystal quality.…”

“…18 The well-ordered inclined NRs array could be utilized to anti-reflection and light-trapping applications for the improvement of photovoltaic device efficiency. 19 Although a few reports discuss the epitaxial growth of (1-10-3)-oriented GaN thin films on m-sapphire substrates, 20,21 the growth of single inclined (1-10-3)-oriented GaN NRs on m-sapphire has not yet been reported or studied to date. In particular, previous attempts at growing (1-10-3)-oriented GaN thin films on m-sapphire have resulted in twinning, which occurred in two a Author to whom correspondence should be addressed.…”

“…Specifically, the GaN NRs grew in a single inclined direction to the [11][12][13][14][15][16][17][18][19][20] sapp . Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer.…”