2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2016
DOI: 10.1109/ispsd.2016.7520830
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Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

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Cited by 19 publications
(10 citation statements)
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“…Finally, the presence of the anti-parallel diodes in the VSI and their absence in the CSI reflects the fact that the CSI needs power switches that can block reverse voltages, unlike the VSI. Fortunately, WBG power switches offer some interesting possibilities for realizing reverse-blocking switches that are not easily achieved with silicon-based IGBTs or MOSFETs [54]- [56]. Unfortunately, space in this paper does not permit a full discussion of the potential advantages offered by the CSI inverter topology over the VSI when WBG power switches are introduced.…”
Section: Wbg-enabled Current-source Invertersmentioning
confidence: 96%
“…Finally, the presence of the anti-parallel diodes in the VSI and their absence in the CSI reflects the fact that the CSI needs power switches that can block reverse voltages, unlike the VSI. Fortunately, WBG power switches offer some interesting possibilities for realizing reverse-blocking switches that are not easily achieved with silicon-based IGBTs or MOSFETs [54]- [56]. Unfortunately, space in this paper does not permit a full discussion of the potential advantages offered by the CSI inverter topology over the VSI when WBG power switches are introduced.…”
Section: Wbg-enabled Current-source Invertersmentioning
confidence: 96%
“…However, this number is in fact similar to that of industry-approved two-stage and quasi-single-stage solutions. Moreover, a new impulse for industrialization can be given by the recent developments in monolithic reverse-blocking and bidirectional semiconductor devices that have been reported for Si, SiC and GaN technologies [137][138][139][140][141][142]. This technology can make the isolated matrix inverters attractive to the industry by reducing the number of discrete devices by up to twofold at the AC side.…”
Section: Semiconductorsmentioning
confidence: 99%
“…This bidirectional switch could be formed either by two conventional IGBTs in common-emitter or by a common-collector and reverse blocking IGBT connection. Actually, a classical IGBT semiconductor structure could be replaced by a reverse blocking MOSFETs for a high-voltage [21] and high-switching frequency operation [22]. Although more than two cells in a series connection are conceptually feasible, for the sake of simplicity, two-cell 3L-TNPC converters have been introduced as a proof-of-concept applied to conventional string rooftop PV applications.…”
Section: The 5l-ctnpc Converter Topologymentioning
confidence: 99%