This study compared the stability
and durability of copper indium gallium selenide (CIGS)-type solar
cells prepared using one-step and three-step co-evaporation methods
by investigating the causes of degradation in each layer in detail.
Measurements recorded using a solar simulator showed that the sample
prepared using the three-step method had better device performance
owing to the large-grained structure of the CIGS absorber layer, which
reduced the carrier recombination. Focusing on the discrepancy in
grain size, multifarious degradation tests were conducted according
to the IEC 61646 standard to evaluate the stability of the cells under
harsh environments such as high humidity (85%), high temperature (85 °C),
and mechanical load. Damp heat (85%/85 °C) did not affect the
CIGS resistivities in either sample, whereas all the aluminum-doped
zinc oxide layers degraded, as determined by confirming the chemisorbed
oxygen by exposure to a hot, humid environment. After 200 thermal
cycles, the CIGS layers in both samples were mainly degraded while
there were no changes in the resistivities of the AZO layer in either
sample. The thermal cycling test highlights that the initial resistivities
of the one-step sample showed a decisive change before and after thermal
cycling compared to the three-step sample. This change might be caused
by carriers being scattered at the grain boundaries. Although there
were no big differences in the FT-IR spectra before and after thermal
cycling, both XRD and XPS results confirmed that not only copper indium
sulfide selenium elements of the secondary phase were newly observed
by sulfide diffusion from the CdS layer but also that each element
(Cu, In, Ga, and Se) was slightly oxidized by the rapid temperature
variation from −45 to 85 °C. These results prove that
the three-step co-evaporation method can produce cells with much higher
stability and durability, even when operated under high humidity and
temperature conditions.