Interreactions of diffusion couples of TiAl 3 film on bulk -TiAl and TiAl 3 film on bulk 2 -Ti 3 Al are investigated at high temperature. Experimental results show that TiAl 2 layer and TiAl 2 /-TiAl mixed layers are observed at the interfaces of TiAl 3 film/bulk -TiAl and TiAl 3 film/bulk 2 -Ti 3 Al diffusion couples, respectively, at 700$1000C. In addition, the growth rates of TiAl 2 and -TiAl product layers comply well with a parabolic law. The growth activation energy, Q k , of the TiAl 2 phase in the TiAl 3 film/bulk -TiAl system is calculated as 158.9 kJ/ mol, and Q k values of -TiAl and TiAl 2 phases in TiAl 3 film/bulk 2 -Ti 3 Al system are 163.4 kJ/mol and 147.9 kJ/mol, respectively. These Q k values are similar in magnitude with those of TiAl 3 phase formation in Ti-Al thin film diffusion systems. In this study, TiAl 2 formation is suggested to have been nucleated at the interface during the heating prior to reaching the set temperature.