KEM 2009 DOI: 10.4028/www.scientific.net/kem.407-408.347 View full text
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A.Q. Biddut, Ji Wang Yan, Liang Chi Zhang, Tsutomu Ohta, Tsunemoto Kuriyagawa, B. Shaun

Abstract: This paper investigates the deformation in monocrystalline silicon subjected to single-point cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of…

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