2019
DOI: 10.1016/j.cocom.2019.e00411
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Defects and dopant properties of SrSnO3 compound: A computational study

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Cited by 16 publications
(16 citation statements)
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“…Analyzing the experimental results reported and the recent works on other materials [ 29,31–38 ] indicates that the atomistic modeling technique works well. We use this technic for examining the relative energies of substitution of trivalent RE dopant at K, Ba/Sr, and P host sites in KMPO 4 , knowing that charge compensating mechanisms are needed and all possible schemes, using Kröger−Vink notation, [ 27 ] were considered, and are summarized and shown in Table 3 .…”
Section: Resultsmentioning
confidence: 87%
“…Analyzing the experimental results reported and the recent works on other materials [ 29,31–38 ] indicates that the atomistic modeling technique works well. We use this technic for examining the relative energies of substitution of trivalent RE dopant at K, Ba/Sr, and P host sites in KMPO 4 , knowing that charge compensating mechanisms are needed and all possible schemes, using Kröger−Vink notation, [ 27 ] were considered, and are summarized and shown in Table 3 .…”
Section: Resultsmentioning
confidence: 87%
“… 42 From the earlier reports, the formation of intermediate energy levels within the forbidden gap and order-disorder parameters present in the host matrix could decrease the optical band gap value. 34 The band gap ( E g ) is affected by the synthesis process, surface morphology, temperature (calcination), and pH of the precursors. The oxygen vacancies, impurities/dopants, or distortions might create an additional energy level in the forbidden energy bands of stannates.…”
Section: Resultsmentioning
confidence: 99%
“…In the ABO 3 structure, doping at the B site enhances the photoactivity. 34 However, more works on transition, RE, and semimetals are recorded but indium-doped SrSnO 3 for DSSC applications is seldom studied and reported.…”
Section: Introductionmentioning
confidence: 99%
“…Regarding theoretical methods to approach these mechanisms, it is well-known that atomistic simulations constitute a powerful tool to study physicochemical properties of compounds, as well as other processes such as transport, defect chemistry, mechanical stability, and electronic properties. Density functional theory (DFT) is equally efficient to study the ground-state properties of small system compounds. , Force-field-based static simulations are useful to study the formation, defect energetics, and optimal migration path of ions within a given lattice structure. Large-scale molecular dynamics (MD) simulations are suitable for predictions (or replication) of transport properties in large systems. ,,, The electronic band structure, density of states (DOS), complex dielectric function, optical absorption, and the infrared and Raman spectra of pristine SrSnO 3 were investigated by DFT computations . Reported results agreed well with experimental observations of these properties.…”
Section: Introductionmentioning
confidence: 99%
“…Reported results agreed well with experimental observations of these properties. The defect formation was studied using static simulations of various dopants in SrSnO 3 . , These results provided an incorporation mechanism point of view, a reasonable doping strategy for reduction of the energy gap with implication in photocatalytic activities. , …”
Section: Introductionmentioning
confidence: 99%