Defect-related photoluminescence from ammono GaN

Reshchikov, M. A.; Vorobiov, M.; Grabiańska, Karolina; Zając, M.; Iwińska, Małgorzata; Boćkowski, Michał

doi:10.1063/5.0045019

Cited by 13 publications

(10 citation statements)

References 43 publications

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“…From its shape, the ZPL is expected at ≈2.86 eV; i.e., the transition level of the related defect is located at ≈0.6 eV. [ 54 ] Among complexes predicted by first‐principles calculations, the closest candidate is the V Ga ‐3H i complex with calculated ħω em = 2.13 eV. [ 49 ] Significant red shifts of the YL2 band (up to 0.1 eV) are observed with decreasing excitation intensity or with time after a laser pulse.…”

Section: The Vga‐containing Complexes In Ganmentioning

confidence: 99%

Photoluminescence from Vacancy‐Containing Defects in GaN

Reshchikov

2022

Physica Status Solidi (a)

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Optical studies of point defects in crystals began in the 1920s by Robert Pohl and his research group at the University of Göttingen. [1] For many years, the so-called color centers in alkali halides were the focus of these studies, and the primary defect of interest was F-center. [2][3][4][5] The F-center (named after the German word "Farbe" for color) is an anion vacancy; an example is V Cl in NaCl. The name "color centers," first used in 1930, is applied to atomic-size imperfections of a crystal lattice that cause Gaussian-like absorption bands in alkali halides. [1] The family of color centers quickly increased: the U, V, F', M, R, H, V k , F 2 , F 3 , … centers, which were thought to be primarily intrinsic (native) defects and their complexes. [1] (Typical terminology can be found in Refs. [3,6,7]). Theorists predicted that when light is absorbed in the characteristic absorption band (e.g., at 2.77 eV for NaCl), luminescence may occur at lower photon energy. [8,9] In particular, Pekar [9] calculated for the F-center in NaCl that a luminescence band with a maximum at 0.99 eV should be observed at temperatures below 100 K. It took three decades after the beginning of optical studies to discover photoluminescence (PL) from these defects. First, Ghormley and Levy [10] have found a PL band that could be due to the F-center in KCl, while Klick [11] could not confirm it. Later, careful experiments of Botden et al. [12] unambiguously identified F-centers in KCl, RbCl, KBr, and KI. The absorption and emission spectra of color centers represent Gaussian-like bands, the shape and position of which can be explained with the configuration-coordinate (cc) model.At about the same time, intensive studies were conducted on luminescence from semiconductor phosphors, such as ZnS, which had applications in television tubes, fluorescent lamps, and X-Ray screens. Metal impurities (activators) were used to activate PL bands. However, sometimes, bright PL bands appeared without activation. These "self-activated" PL bands in ZnS were attributed to the zinc vacancy (V Zn ) associated with shallow donors (group-III impurities in the nearest Zn site or group-VII impurities in the S site). [13] Experiments with polarized PL confirmed the predicted symmetry of the defect complexes. [14] Later, very similar complexes were found in n-type GaAs, where strong self-activated luminescence with a maximum at 1.2 eV has been attributed to the gallium vacancy-donor complexes, such as V Ga Te As and V Ga Sn Ga . [15][16][17] PL studies using polarized excitation and uniaxial pressure revealed that the Jahn-Teller distortions lower the symmetry of these defects. [18] Similarly, complexes involving the arsenic vacancy and shallow acceptors (V As Cd Ga and V As Zn Ga ) were proposed to be the origin of the 1.37 eV band in p-type GaAs. [19] GaN, being the third-generation semiconductor material (wide-bandgap semiconductors), has gained unprecedented attention in the past three decades due to its applications in light-emitting and high-power devices. Un...

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Section: The Vga‐containing Complexes In Ganmentioning

confidence: 99%

Photoluminescence from Vacancy‐Containing Defects in GaN

Reshchikov

2022

Physica Status Solidi (a)

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“…1(d) and highlighted with a dashed horizontal white line. Note that in this case we observe not only the QD emission but also the presence of a red-shifted PL signal at ∼2.25 eV arising from defects in the GaN matrix [22,23]. In contrast, for the case of the Res-2PA excitation we measure the QD signal on top of an underlying background that arises from InGaN quantum wells [15].…”

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confidence: 85%

Three-photon excitation of quantum two-level systems

Villafañe¹,

Scaparra²,

Rieger³

et al. 2022

Preprint

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We demonstrate experimentally the long-standing fundamental theoretical prediction that quantum two-level systems can only be efficiently resonantly excited via multi-photon pulses involving an odd number of photons. This prediction can be seen directly from time-dependent Floquet theory that also allows us to quantify the strength of the multi-photon processes. For the experimental demonstration, we perform spectroscopy measurements on a single InGaN quantum dot with a variety of laser detunings, and observe that the system can be excited in a resonant three-photon process, whilst resonant two-photon excitation is entirely suppressed. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to non-resonant excitation.

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“…The luminescence spec of the GaN film was affected by the film quality and defects [38,39]. The bandgap defect luminescence depended on the incident light intensity linearly and nonlinearl spectively [40]. Higher intensity and shorter linewidth of the PL spectra proved the b quality and fewer defects of the grown film.…”

Section: Power-dependent Photoluminescencementioning

confidence: 99%

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

Lan

2021

Coatings

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In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify the surface morphology of the substrate so that the crystalline quality of the grown GaN layer can be improved. With higher preheated temperatures, the grown GaN layer reveals smaller FWHM (full width at half-maximum) of the X-ray rocking curve. In addition, we find that the photoluminescence spectra of the GaN layers reveal their narrowest linewidth at a preheated temperature of 800 °C. These results support improvements of crystalline quality and provide optimization of a c-GaN grown epitaxially on the preheated (−2 0 1) β-Ga2O3 substrates for further device fabrication.

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Defect-related photoluminescence from ammono GaN

Cited by 13 publications

References 43 publications

Photoluminescence from Vacancy‐Containing Defects in GaN

Photoluminescence from Vacancy‐Containing Defects in GaN

Three-photon excitation of quantum two-level systems

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

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