MRS Proc. 2000 DOI: 10.1557/proc-610-b10.3 View full text
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Heather Banisaukas, Kevin S. Jones, Somit Talwar, Scott Falk, Dan F. Downey

Abstract: AbstractLaser thermal processing (LTP) of Si involves laser melting a preamorphized layer in order to activate dopants and create a low resistivity contact. Defects are often observed to form during the recrystallization of the molten layer. This work focuses on varying the implant conditions and the pre-LTP annealing conditions in an effort to reduce these defect concentrations. The effect of very low temperature anneals (VLTA) and varying dose rates on the amorphous/crystalline interface roughness prior to L…

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