Defect microstructure and microplasmas in silicon avalanche photodiodes

Leśniak, Magdalena; Holt, D. B.

doi:10.1007/bf01161457

Cited by 8 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At 10.4 V, so many microplasma tubes are on that the APD can generate currents more than 1 mA. It is reported that APDs emit light from the microplasma sites during breakdown [10]. We have examined this fact by looking at an APD during breakdown in the dark.…”

Section: Apd Breakdown and Microplasmamentioning

confidence: 97%

CMOS image sensors and camera-on-a-chip for low-light level biomedical applications

Deen

Desouki

Faramarzpour

2008

2008 IEEE International Conference on Electron Devices and Solid-State Circuits

View full text Add to dashboard Cite

With the advances in deep submicron CMOS technologies, CMOS-based active-pixel sensors (APS) have become a practical alternative to charge-coupled devices (CCD) imaging technology. Key advantages of CMOS image sensors are that they are fabricated in standard CMOS technologies, which allow full integration of the image sensor along with the analog and digital processing and control circuits on the same chip and that they are of low cost. Since there is a practical limit on the minimum pixel size (4~5 μm), then CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel. Such smart pixels truly show the potential of CMOS technology in imaging applications, especially for high-speed applications. This work discusses various active-pixel sensors (APS) and shows the feasibility of using the DC-level to increase the sensitivity of the pixel for low-level light applications. Avalanche-photodiodes (APDs) are described, in addition to a discussion of the breakdown mechanism and microplasma in avalanche breakdown for single photon APDs. A fully integrated, 16×16 pixel CMOS camera-on-a-chip, fabricated in a standard CMOS 0.18 μm technology is also shown in this work. The array is based on 256 APS with a pixel size of 20 μm × 30 μm, a fill-factor of 60% with all digital and analog blocks implemented on-chip.

show abstract

Section: Apd Breakdown and Microplasmamentioning

confidence: 97%