Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion

Morozov, Yu. V.; Draguta, Sergiu; Zhang, Shubin; Cadranel, Alejandro; Wang, Yuanxing; Jankó, Boldizsár; Kuno, Masaru

doi:10.1021/acs.jpcc.7b05095

Cited by 31 publications

(39 citation statements)

References 46 publications

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“…Less frequently reported but equally relevant is the observation that I ASPL increases (decreases) exponentially with decreasing (increasing) detuning (i.e., ΔE) of the excitation laser into the semiconductor gap. This has been reported for CdS 57 and CsPbBrI 2 NCs 69 , as well as for free-standing GaN films 114 . These dependencies again point to phonon involvement given the exponential ΔE dependency of the Boltzmann distribution.…”

supporting

confidence: 60%

“…Most existing nanostructure upconversion studies suggest the involvement of real, defect-related intermediate states that are relatively "dark" (i.e., low oscillator strength) in absorption. This includes work on TiO 2 53,54 , CdS [55][56][57] , CdSe [58][59][60][61][62] , CdTe 59,[63][64][65][66] , InP 55,58 , PbS 67 , Ag 2 S 68 , and CsPbBrI 2 NCs 69 . A few suggest the involvement of virtual intermediate states, especially when two-photon upconversion has been claimed (e.g., in CdS 70 and CdTe 71 NCs).…”

Section: Towards Nanostructuresmentioning

confidence: 99%

“…Figure 5 shows exact numerical solutions to Eqs. 1-3 using rate constants and parameters established for CdS NBs 57 :…”

Section: Nc/nanostructure Photophysics Under Above Gap Excitationmentioning

confidence: 99%

“…6b. Whereas both pulsed 57,91,92 and continuous wave (CW) 93 laser sources have been employed for PDPL, the following model description assumes the use of a CW laser. Specifics regarding the pulsed case modeling can be found in refs.…”

Section: Power-dependent Photoluminescencementioning

confidence: 99%

“…, CdS 56 , CdSe [58][59][60][61][62]104 , CdTe 59,[63][64][65]105 , PbS 67 , CsPbBr 3 73,103 , and CsPbBrI 2 69,106 . Other nanostructures exhibiting linear I ASPL versus I exc behavior include CdS NBs 47,57,107 , ZnTe nanoribbons 108 , bulk MAPbI 3…”

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confidence: 99%

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Progress in laser cooling semiconductor nanocrystals and nanostructures

et al. 2019

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Over the past two decades, there have been sizable efforts to realize condensed phase optical cooling. To date, however, there have been no verifiable demonstrations of semiconductor-based laser cooling. Recently, advances in the synthesis of semiconductor nanostructures have led to the availability of high-quality semiconductor nanocrystals, which possess superior optical properties relative to their bulk counterparts. In this review, we describe how these nanostructures can be used to demonstrate condensed phase laser cooling. We begin with a description of charge carrier dynamics in semiconductor nanocrystals and nanostructures under both above gap and below-gap excitation. Two critical parameters for realizing laser cooling are identified: emission quantum yield and upconversion efficiency. We report the literature values of these two parameters for different nanocrystal/nanostructure systems as well as the measurement approaches used to estimate them. We identify CsPbBr 3 nanocrystals as a potential system by which to demonstrate verifiable laser cooling given their ease of synthesis, near-unity emission quantum yields and sizable upconversion efficiencies. Feasibility is further demonstrated through numerical simulations of CsPbBr 3 nanocrystals embedded in an aerogel matrix. Our survey generally reveals that optimized semiconductor nanocrystals and nanostructures are poised to demonstrate condensed phase laser cooling in the near future.

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supporting

confidence: 60%

Section: Towards Nanostructuresmentioning

confidence: 99%

“…Figure 5 shows exact numerical solutions to Eqs. 1-3 using rate constants and parameters established for CdS NBs 57 :…”

Section: Nc/nanostructure Photophysics Under Above Gap Excitationmentioning

confidence: 99%

Section: Power-dependent Photoluminescencementioning

confidence: 99%

mentioning

confidence: 99%

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Progress in laser cooling semiconductor nanocrystals and nanostructures

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Quantum Point Defects for Solid‐State Laser Refrigeration

et al. 2020

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Herein, the role that point defects have played over the last two decades in realizing solid‐state laser refrigeration is discussed. A brief introduction to the field of solid‐state laser refrigeration is given with an emphasis on the fundamental physical phenomena and quantized electronic transitions that have made solid‐state laser‐cooling possible. Lanthanide‐based point defects, such as trivalent ytterbium ions (Yb3+), have played a central role in the first demonstrations and subsequent development of advanced materials for solid‐state laser refrigeration. Significant discussion is devoted to the quantum mechanical description of optical transitions in lanthanide ions, and their influence on laser cooling. Transition‐metal point defects have been shown to generate substantial background absorption in ceramic materials, decreasing the overall efficiency of a particular laser refrigeration material. Other potential color centers based on fluoride vacancies with multiple potential charge states are also considered. In conclusion, novel materials for solid‐state laser refrigeration, including color centers in diamond that have recently been proposed to realize the solid‐state laser refrigeration of semiconducting materials, are discussed.

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Rb₂CuX₃ (X = Cl, Br): 1D All‐Inorganic Copper Halides with Ultrabright Blue Emission and Up‐Conversion Photoluminescence

Creason

Yangui

Roccanova

et al. 2019

Advanced Optical Materials

102

183

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The United States Department of Energy (DOE) projects an estimated energy cost savings of $630 billion from 2015 to 2035 if reliable solid-state lighting technologies can be developed and DOE goals are met. [1] For the cost-effective implementation of light-emitting diodes (LEDs), development of new inexpensive light emitters is an urgent need. Owing to their outstanding photophysical properties including tunable bandgaps and emission colors, high photoluminescent quantum yields (PLQY) and excellent color purity, metal halide perovskite LEDs (PeLEDs)

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Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion

Cited by 31 publications

References 46 publications

Progress in laser cooling semiconductor nanocrystals and nanostructures

Progress in laser cooling semiconductor nanocrystals and nanostructures

Quantum Point Defects for Solid‐State Laser Refrigeration

Rb₂CuX₃ (X = Cl, Br): 1D All‐Inorganic Copper Halides with Ultrabright Blue Emission and Up‐Conversion Photoluminescence

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Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion

Cited by 31 publications

References 46 publications

Progress in laser cooling semiconductor nanocrystals and nanostructures

Progress in laser cooling semiconductor nanocrystals and nanostructures

Quantum Point Defects for Solid‐State Laser Refrigeration

Rb2CuX3 (X = Cl, Br): 1D All‐Inorganic Copper Halides with Ultrabright Blue Emission and Up‐Conversion Photoluminescence

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Rb₂CuX₃ (X = Cl, Br): 1D All‐Inorganic Copper Halides with Ultrabright Blue Emission and Up‐Conversion Photoluminescence