2011
DOI: 10.1103/physrevb.83.165439
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Defect-induced multicomponent electron scattering in single-walled carbon nanotubes

Abstract: We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar + irradiated nanotubes. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contacts and an STM tip. The formalism is based on a field theoretical approach describing lowenergy electrons. We account f… Show more

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Cited by 23 publications
(39 citation statements)
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References 52 publications
(80 reference statements)
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“…Local Coulomb scatterers can flip the valley index (Pályi and Burkard, 2010;Bercioux et al, 2011), and spin-carrying impurities can flip both spin and valley with comparable rates (Pályi and Burkard, 2009). One example is hyperfine coupling to nuclear 13 C spins, which can cause both spin and valley relaxation (Sec.…”
Section: Semiconducting Metallicmentioning
confidence: 99%
“…Local Coulomb scatterers can flip the valley index (Pályi and Burkard, 2010;Bercioux et al, 2011), and spin-carrying impurities can flip both spin and valley with comparable rates (Pályi and Burkard, 2009). One example is hyperfine coupling to nuclear 13 C spins, which can cause both spin and valley relaxation (Sec.…”
Section: Semiconducting Metallicmentioning
confidence: 99%
“…The STM tip is modeled as a semi-infinite Fermi contact, with the Hamiltonian H tip , placed above the dot at a position y. The tunnel coupling H tip t is expressed in terms of the tip Fermi field operator ψ s,F (z) (z is the coordinate along the tip with z = 0 at the vertex) [64], with tunneling barrier transparency τ…”
Section: Couplingsmentioning
confidence: 99%
“…1] is a direct probe of the locally available electronic states in the TLL, assuming the density of states in the STM tip to be a constant. In a TLL wire the STM current has been shown to vary as a power of the bias voltage: dI/dV ∝ ρ(ω) ∝ ω ∆−1 , with the TDOS exponent ∆ depending on the strength of the e-e interaction strength [41][42][43][44][45][46][47]. The TDOS exponent in a spinless two wire junction tuned to the connected (or a single wire without impurity) [5 and 48] and disconnected fixed points (single wire with impurity) [5,[49][50][51], are known to be ∆ = (g + g −1 )/2 and ∆ = 1/g respectively, where g denotes the TLL interaction parameter.…”
Section: Introductionmentioning
confidence: 99%