Defect-induced Fermi level pinning and suppression of ambipolar behaviour in graphene

Moktadir, Zakaria; Hang, Shuojin; Mizuta, Hiroshi

doi:10.48550/arxiv.1410.4400

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2015

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“…Previosly, there were observed separately either weak localization (WL) or different kinds of Variable-Range-Hopping (VRH) conductivity of strongly localized carriers in graphene samples disordered by different methods like doping, oxidation, ion irradiation (see, for example, [1][2][3][4][5][6][7][8]). However, we are not aware of observations of all regimes of localization with gradual increase of disordering in graphene.…”

Section: Introductionmentioning

confidence: 99%

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Zion¹,

Haran²,

Бутенко³

et al. 2015

Graphene

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Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C + ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

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