Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Abstract

Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.

Diselenophene‐Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors

“…Meanwhile, the large V th and switch‐on voltage indicate the existence of deep trap states at the interface between the semiconductor film and the dielectric. [ 87 , 88 ] Mobile carriers may interact with shallow trap states in the vicinity of a chemical impurity, allowing the capture of the electron into a deeply trapped state. [ 89 , 90 ] Consequently, the present results are comparable with those of previous studies, where transistors based on the majority of organic semiconductor crystals with ambipolar characteristics by using air‐stable electrode materials such as gold, would have required relatively high operating voltages for the simultaneous injection and transport of the two opposite carriers.…”

Organoboron-embedded functional materials: recent developments in photovoltaic and luminescence properties

“…[93][94][95][96][97][98][99] Carrier mobility is a pivotal parameter in characterizing the performance of OFET devices. For high carrier mobility, OFETs require semiconductor layer molecules with long conjugate structures, good planarity, and p-p stacking structures, 100 which are conducive to the occurrence of an effective ICT process, resulting in improved device performance. 101 In 2022, Daohai Zhang et al investigated the properties of PPABbased material 31 on OFETs.…”

Photophore‐Anchored Molecular Switch for High‐Performance Nonvolatile Organic Memory Transistor

“…[ 37 ] However, all previous studies could not successfully demonstrate a photoprogrammable threshold voltage shift (ΔV th ) or memory window in OFET memory, which is a pivotal factor in memory device functionality. Given that the ΔV th is determined by deep trap states, [ 38 , 39 ] we can speculate that simply mixing a molecular switch with a polymer semiconductor is unlikely to induce stable deep trap state and more strategical approach is required. Actually, the mixing approach has limitations of phase stability due to the inherent susceptibility of the blends to phase separation.…”