Deep-Submicron CMOS ICs

MOSFET mismatch modeling: a new approach

“…[1][2][3] Time-independent variations between identically designed transistors, called mismatch, affect the performance of most analog and even digital MOS circuits. In analog circuits, the spread in the DC characteristics of supposedly matched transistors produces inaccurate or even anomalous circuit behavior.…”

“…In analog circuits, the spread in the DC characteristics of supposedly matched transistors produces inaccurate or even anomalous circuit behavior. 2 In digital circuits, transistor mismatch leads to propagation delays whose spread can amount to several gate delays for deep-submicron technologies. 2,3 As Meindl predicted, "Variations will set the ultimate limits on scaling of MOSFETs."…”

A compact model of MOSFET mismatch for circuit design

“…In analog circuits, the spread in the dc characteristics due to doping statistics in the MOSFET channel results in inaccurate or even anomalous circuit behavior [5]. Also, for digital circuits, transistor mismatch leads to propagation delays whose spread can be of the order of several gate delays for deep-submicron technologies [5].…”

“…As MOSFETs are scaled down to the deep-submicron regime, the number of dopants in the depletion layer decreases, being on the order of only hundreds for minimum-size devices [17]. As an example, a minimum transistor in a 0.25-m process contains about 1100 dopant atoms in the depletion layer while in a 0.1-m process this number is only around 200 [5]. The relative spread in the number of dopant atoms in the depletion layer causes a spread in the threshold voltage, which increases with each new process generation [17].…”

Static Power Consumption in CMOS Gates Using Independent Bodies

“…However, static CMOS gates present strong performance degradation as the number of inputs increases, due to the so-called body effect and the internal parasitic capacitance associated to series-connected transistor [1,2]. Also, static power is becoming relevant in CMOS logic as the transistor size decreases, so that reducing leakage current is more and more important [3].…”