2017
DOI: 10.1039/c7ee00303j
|View full text |Cite
|
Sign up to set email alerts
|

Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

Abstract: We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
144
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 215 publications
(153 citation statements)
references
References 25 publications
4
144
1
Order By: Relevance
“…The major defect states observed in FTO/TiO 2 /MAPbI 3 /Spiro-OMeTAD/Au devices include a major shallowdefect peak at 0.167 eV and a deep-level defect higher than 0.3 eV above the valence band [44]. The integrated densities of the major defect states in both cases are ∼10 16 cm −3 , which lie within the broad range of later reports, where values of ∼10 15 to 10 17 cm −3 were found [45,46,51,52]. AS measurements sample an ensemble and are limited by assumptions about system homogeneity that can mask nanoscale heterogeneity.…”
Section: Device Level Characterizationsupporting
confidence: 83%
“…The major defect states observed in FTO/TiO 2 /MAPbI 3 /Spiro-OMeTAD/Au devices include a major shallowdefect peak at 0.167 eV and a deep-level defect higher than 0.3 eV above the valence band [44]. The integrated densities of the major defect states in both cases are ∼10 16 cm −3 , which lie within the broad range of later reports, where values of ∼10 15 to 10 17 cm −3 were found [45,46,51,52]. AS measurements sample an ensemble and are limited by assumptions about system homogeneity that can mask nanoscale heterogeneity.…”
Section: Device Level Characterizationsupporting
confidence: 83%
“…Defect levels are often measured using methods like deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) [10][11][12][13] . However, difficulties in incorporating specific impurities or dopants in a given compound and in attributing measured levels to specific defects make experimental methods less than ideal for an extensive study of defects and impurities in semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…DLTS is a well-accepted powerful tool to investigate defect energy level, type and concentration in thin film photovoltaics 14, 15, 3740 . It uses the transient capacitance of p–n junction at different temperature as a probe to monitor the changes in charge state of a deep defect center 41 .…”
Section: Resultsmentioning
confidence: 99%
“…The shift of quasi-Fermi levels is positively correlated with the nonequilibrium carrier concentration. The difference between the two quasi-Fermi levels determines V OC of the solar cell 14 .
Fig. 6Influence of defect levels on the CdS/Sb 2 Se 3 solar cells.
…”
Section: Resultsmentioning
confidence: 99%