Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

Simoen, Eddy; Backker, K. De; Claeys, Cor; Clauws, Paul

doi:10.1007/bf02655621

Cited by 5 publications

(6 citation statements)

References 27 publications

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“…Another useful source of information is the DLTS literature on processing-induced defects in HR FZ-Si. 10,11,[27][28][29] In fact, there is a reasonable similarity between Fig. 3 etching revealed in that case the presence of thermal-stress-induced dislocations.…”

Section: Discussionsupporting

confidence: 73%

“…The experimental conditions have been selected such that the impact of the series resistance R s of the samples was minimized. 10 This means that, typically, DLTS was recorded at a relatively large reverse bias, i.e., Ϫ4 V, so that a significant fraction of the material was depleted. Assuming a depletion width of 150 m at Ϫ4 V for a resistivity of 5 k⍀ cm results in a diode Q factor of ϳ0.06 (Ӷ1) at room temperature, implying a marginal impact of R s .…”

Section: Methodsmentioning

confidence: 99%

“…Assuming a depletion width of 150 m at Ϫ4 V for a resistivity of 5 k⍀ cm results in a diode Q factor of ϳ0.06 (Ӷ1) at room temperature, implying a marginal impact of R s . Furthermore, as the Q factor of silicon reduces with cooling ͑ reduces͒, 10 no effect is expected for the deep level peaks, occurring below 200 K in the spectra. This is confirmed by the C-T plot showing a flat behavior in the high-temperature part ͑see below͒.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

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The behavior of oxygen in oxygen-doped high-resistivity (HR) n-type float-zone (FZ) silicon has been studied using a combination of analytical techniques. In the as-doped material, a large number of deep levels have been observed with deep-level transient spectroscopy. The corresponding parameters (concentration, activation energy, and trap signature) are given, and the possible identity is discussed in view of the presence of oxygen and other impurities in the material. In addition, the impact of a low-temperature hydrogen-plasma preannealing on the formation of oxygen thermal donors (OTDs) and other oxygen-related shallow thermal donors (STDs) at 450°C is described. It is shown that the introduction rate of OTDs in oxygenated HR FZ silicon is much smaller than in Czochralski silicon. In fact, for short anneals at 450°C following a plasma treatment, the STDs are the ones which have been predominantly created near the surface of the samples. © 2003 The Electrochemical Society. All rights reserved.

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Section: Discussionsupporting

confidence: 73%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Simoen

Claeys

Job

et al. 2003

J. Electrochem. Soc.

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“…The impact of high series resistance (i.e. r s (ωC) −1 ) on the DLTS spectra has been reported previously, but only for lowly doped layers [37][38][39][40][41][42] . Due to low doping, r s was high and in the cases where Q was greater than 1, the observed capacitance transient (associated with majority carriers) became negative 38,40,41 , as expected from Eq.…”

mentioning

confidence: 77%

“…3. Nonetheless, in all reports [37][38][39][40][41][42] it was presumed that r s G 1 and correspondingly Q was approximated as ωr s C and C p was approximated as C/Q 2 . The devices under test were either lowly doped Schottky diodes or MOS capacitors.…”

mentioning

confidence: 99%

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

Gupta

Simoen

Loo

et al. 2018

Applied Physics Letters

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Peculiar features of the deep level transient spectroscopy (DLTS) measurements on p+−i−n+ In0.53Ga0.47As tunnel diodes are explained. It is shown that due to the high doping of the tunnel diodes and the large band to band tunneling conductance under reverse bias, the DLTS spectrum is prone to erroneous interpretations. We discuss a procedure to identify the cause. In the tunnel diodes, a donor-like hole trap (H1) associated with a point defect, with an activation energy of EV + 0.09 eV and a capture cross-section of (2.4 ± 1) × 10−19 cm2, is identified. In addition to the thermal emission, we report the observation of tunneling emission of holes from the H1 trap.

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The low-frequency noise behaviour at room temperature and at 77 K of pMOSTs fabricated on high-resistivity silicon substrates

Simoen

Claeys

1993

Nuclear Instruments and Methods in Physics Research Section A:

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Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

Cited by 5 publications

References 27 publications

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

The low-frequency noise behaviour at room temperature and at 77 K of pMOSTs fabricated on high-resistivity silicon substrates

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