Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology

Komiak, J.J.; Chu, Kanin; Chao, P.C.

doi:10.1109/mwsym.2011.5972561

Cited by 23 publications

(6 citation statements)

References 7 publications

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“…As noted in previous works, the main reasons GaN DAs are bulky are their long gate/drain lines and the sparse distribution of FETs in a line [3–5, 7]. Most of the reported GaN DAs have removed drain line termination resistances to minimise power loss.…”

Section: Circuit Designmentioning

confidence: 99%

“…GaN PAs raise the prospect of compact solid state PAs (SSPAs) replacing bulky travelling wave tube amplifiers to obtain both wideband and high RF powers, which are essential to many applications such as electronic warfare systems and security communications. Recently, much significant work has been done on wideband GaN PA monolithic microwave integrated circuits (MMICs) [2–7].…”

Section: Introductionmentioning

confidence: 99%

“…Size‐efficient GaN PA design is important because making SSPAs more compact reduces GaN foundry costs. Previously reported GaN DA MMICs, while showing excellent output power from C ‐band to Ku‐band [3–5, 7], have not considered the issue of efficient chip size. This Letter proposes a size‐efficient GaN DA for output power densities higher than those achieved in previous studies.…”

Section: Introductionmentioning

confidence: 99%

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6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

et al. 2016

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A 6-18 GHz, 8.1 W gallium nitride (GaN) distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) is presented with compact size. To accomplish high-output power density with compact size, the last two sections of the DA consist of small-sized FETs. This approach improves the output return loss and allows the drain line lengths to be reduced thereby increasing the drain cutoff frequency and reducing circuit size, which results in increased gain and output power characteristics up to higher frequencies. Source via holes of GaN high electron mobility transistors (HEMTs) are also shared to reduce chip size. The proposed DA is implemented as a two-stage DA using a commercial 0.25 µm GaN MMIC process. It shows 8.1 W average continuous wave output power and 6.8 dB average associated gain from 6 to 18 GHz under 36 V drain bias with 6.7 mm 2 chip area. The proposed DA obtains 1.21 W/mm 2 output power density and 1.02 dB/mm 2 gain density.

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Section: Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

et al. 2016

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“…When distributed amplifiers (DAs) are power combined as shown in Fig. 1 a , long drain/gate lines and bulky power combiners increase the chip size [5, 6]. The large chip size not only raises the foundry cost but also degrades the performance of PAs in the process of attaching the chip to modules by thermal pastes.…”

Section: Introductionmentioning

confidence: 99%

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

et al. 2016

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A 6-18 GHz gallium nitride (GaN) non-uniform distributed amplifier (NDA) monolithic microwave integrated circuit with high power density is implemented with compact four-way combined power. The drain lines and gate lines are shared among the combined NDAs. Sharing drain (or gate) lines reduces the drain (or gate) line length by half, while keeping the same characteristic impedances and eliminates bulky and lossy power combiners, such as Wilkinson combiners. The proposed four-way NDA was fabricated using a commercial 0.25 μm GaN high electron mobility transistor (HEMT) process. It shows average continuous wave output power of 20.8 W and average associated gain of 10.7 dB from 6 to 18 GHz under 33 V drain bias. When pulsed input power and pulsed DC bias are simultaneously supplied to the NDA, the output power increases to 26 W, on average. To the best of the authors' knowledge, the highest RF power and power density among the reported GaN power amplifiers with an octave bandwidth higher than the Ku-band is represented in this work.

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“…The use of GaN technology at mm W frequencies has witnessed a significant increase in the past few years starting from devices with record power densities, to high performance MMICs with excellent bandwidth (1-50 GHz [6], and 2-20 GHz [7]), high power [5], and high levels of integration [8].…”

Section: Introductionmentioning

confidence: 99%

Novel 4-way combiner for Ka-band AlGaN/GaN power MMIC

Darwish

Qiu

Viveiros

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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-AKa-band GaN MMIC power amplifier (PA) with a novel 4-way combiner/divider is presented. The on-chip balanced 4-way combiner results in improved input and output return loss, and increased bandwidth. The 32 -38 GHz two stage PA produces a maximum power of 6 watts under class-A operation. This is the first report of this novel compact, combiner concept.Index Terms -power combiner, power splitter, GaN MMIC.

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Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology

Cited by 23 publications

References 7 publications

6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

Novel 4-way combiner for Ka-band AlGaN/GaN power MMIC

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