2023
DOI: 10.1016/j.nanoen.2023.108250
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De-doping buried interface in p-i-n perovskite solar cells by utilizing compositional heterogeneity in depth

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Cited by 10 publications
(8 citation statements)
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“…We fabricated the FA 0.95 Cs 0.05 PbI 3 perovskite films by the two‐step method with high device reproducibility to investigate the impact of thermocompression on perovskite. [ 22 ] The temperature and pressure applied to the perovskite film during thermocompression are consistent with those used in the actual lamination process (120 °C, 70 kPa).…”
Section: Resultsmentioning
confidence: 71%
“…We fabricated the FA 0.95 Cs 0.05 PbI 3 perovskite films by the two‐step method with high device reproducibility to investigate the impact of thermocompression on perovskite. [ 22 ] The temperature and pressure applied to the perovskite film during thermocompression are consistent with those used in the actual lamination process (120 °C, 70 kPa).…”
Section: Resultsmentioning
confidence: 71%
“…S5,† the I/Pb ratios of the pristine, in situ , post, and dual films are 3.91, 3.63, 3.70, and 3.51, respectively, indicating that the accumulation of iodine ions in perovskite films decreased after passivation treatment, which can be attributed to the suppressed migration of iodine ions in the treated perovskite film. 21 Ion migration of iodine is generally believed to be dominated by grain boundaries in polycrystalline films, making it more difficult for ions to migrate in films with large particle sizes. 22 Therefore, the smaller I/Pb ratios in the in situ and dual films should be due to the increase in grain size, which can be further confirmed by scanning electron microscope (SEM) images.…”
Section: Resultsmentioning
confidence: 99%
“…The highest-efficiency p-i-n halide perovskite solar cell reported as of February 2023 had a 25.35% efficiency (certified 24.05%), with the cell architecture and J – V curve shown in Figure d; the highest certified efficiency stands at 24.3% . There have been only ∼10 reported p-i-n devices with PCE > 24%, and only two above 25%. These cells also shared a majority-FAPbI 3 absorber layer, but there was more variance in charge transport layer choice between them. NiO x and MeO-2PACZ are both popular bottom HTLs for high-efficiency p-i-n cells, and the top ETL is usually C 60 or PCBM.…”
Section: Optoelectronic Properties Of 3d and 2d Halide Perovskitesmentioning
confidence: 98%