Dark Current in Silicon Photomultiplier Pixels: Data and Model

Pagano, Roberto; Corso, D.; Lombardo, S.; Valvo, G.; Sanfilippo, D.; Fallica, G.; Libertino, Sebania

doi:10.1109/ted.2012.2205689

Cited by 52 publications

(31 citation statements)

References 19 publications

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“…Using the conventional method for the extraction of activation energies [1], dark currents at a fixed voltage as well as dark currents at a fixed overvoltage were investigated as a function of 1/kT (Arrhenius plot). The breakdown voltage of the investigated SiPM was 27.3V at 20 • C. The results are shown in figure 1 and 2, respectively.…”

Section: Conventional Methodsmentioning

confidence: 99%

“…In the first step of the method, the responsivity (R) of the SiPM was defined for every temperature as shown in equation (1). Here I ph is the photo response of the SiPM.…”

Section: First Approachmentioning

confidence: 99%

“…In order to achieve this requirement, a distinction of contributions determining the DCR is needed to be able to identify the dominating mechanisms. As reported in [1,3,4,5] the extraction of characteristic activation energies from the temperature dependence of the dark current is able to provide information on the dominating mechanisms. Unfortunately these methods are not suited for a precise determination of the needed energy levels, since the investigated dark currents are determined by a mixture of effects depending on voltage on the one hand (e.g.…”

Section: Introductionmentioning

confidence: 98%

See 2 more Smart Citations

Extraction of activation energies from temperature dependence of dark currents of SiPM

Engelmann

Vinogradov

Popova

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. Despite several advantages of Silicon Photomultipliers (SiPM) over Photomultiplier Tubes (PMT) like the increased photon detection efficiency (PDE), the compact design and the insensitivity to magnetic fields, the dark count rate (DCR) of SiPM is still a large drawback. Decreasing of the SiPM dark count rate has become a modern task, which could lead to an enormous enhancement of the application range of this promising photo-detector. The main goal of this work is to gain initial information on the dark generation and identify the dominating contributions to dark currents. The chosen approach to fulfill this task is to extract characteristic activation energies of the contributing mechanisms from temperature dependent investigations of dark currents and DCR. Since conventional methods are not suited for a precise analysis of activation energies, a new method has to be developed. In this paper, first steps towards the development of a reliable method for the analysis of dark currents and dark events are presented. IntroductionThe dark count rate (DCR) of the Silicon Photomultiplier (SiPM) is still a limiting factor for the extension of its application range and requires a significant reduction. In order to achieve this requirement, a distinction of contributions determining the DCR is needed to be able to identify the dominating mechanisms. As reported in [1,3,4,5] the extraction of characteristic activation energies from the temperature dependence of the dark current is able to provide information on the dominating mechanisms. Unfortunately these methods are not suited for a precise determination of the needed energy levels, since the investigated dark currents are determined by a mixture of effects depending on voltage on the one hand (e.g. generation current, electric field effects) and overvoltage on the other hand (e.g. gain, crosstalk, afterpulsing). In this paper, we propose a new method to separate the mentioned effects using the responsivity of the detector as an appropriate reference for the measured dark current. This approach allows us

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Section: Conventional Methodsmentioning

confidence: 99%

“…In the first step of the method, the responsivity (R) of the SiPM was defined for every temperature as shown in equation (1). Here I ph is the photo response of the SiPM.…”

Section: First Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Extraction of activation energies from temperature dependence of dark currents of SiPM

Engelmann

Vinogradov

Popova

et al. 2016

J. Phys.: Conf. Ser.

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“…The process of thermally generated avalanches is stochastic. Number of those avalanches can be reduced by simultaneous measurements of signals in two or more SiPMs with coincidence [11,[18][19][20].…”

Section: Thermal Generationmentioning

confidence: 99%

Reduction of silicon photomultipliers thermal generation in self-coincidence system applied in low level light measurements

Baszczyk¹,

Dorosz²,

Głąb³

et al. 2014

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. The paper presents method for thermal generation reduction in low level light applications, especially where measured phenomena have random character. The algorithm was developed basing on cosmic ray measurements. The main parts of the system are: Silicon Photomultipliers (SiPM), front-end ASIC for amplifying and shaping signals. SiPM is a very sensitive device which can detect single photons. Comparing to a standard photomultiplier SiPM has a compact size, low operating voltage and it is immune to an electromagnetic field. Thermally generated signals are disadvantage of SiPM. This paper presents the measurement method to reduce influence of thermal generation.

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“…Therefore, it is proportional to the number of cells hit by photons [2]. Nowadays SiPMs are an emerging technology, with promising applications in the field of sensors for their unique properties: high quantum efficiency, low operating voltage, high speed, high gain, insensitivity to magnetic fields and single photon sensitivity [3][4]. Due to its high sensitivity and speed, SiPM may be used in low level light detection, e.g.…”

Section: Introductionmentioning

confidence: 99%

CY5 fluorescence measured with silicon photomultipliers

Santangelo¹,

Cono

Vasquez

et al. 2014

2014 IEEE Biomedical Circuits and Systems Conference (BioCAS) Proceedings

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This paper presents an efficient optical biosensor set up for a low-level light detection, using fluorescent dyes and a novel Si-based detector. Fluorescence emitted by a traditional fluorophore, CY5, widely used as optical label in DNA microarrays, was detected using a 25 pixels Silicon photomultiplier (SiPM), a device formed by avalanche diodes operating in Geiger mode, in parallel connections. We measured the fluorescence current in different deposition (fluorophore concentration; solvent; salt concentration) and operation (angle of analysis, optical laser power, device gain) conditions. The characterization of DNA samples labeled with CY5 is also reported to demonstrate the detector potentiality to replace traditional optical readers commonly used in commercial devices.

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Dark Current in Silicon Photomultiplier Pixels: Data and Model

Cited by 52 publications

References 19 publications

Extraction of activation energies from temperature dependence of dark currents of SiPM

Extraction of activation energies from temperature dependence of dark currents of SiPM

Reduction of silicon photomultipliers thermal generation in self-coincidence system applied in low level light measurements

CY5 fluorescence measured with silicon photomultipliers

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