Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide

Abstract

Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T1 of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T1 measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100–400 K, yielding T−11∝T2 behavior consistent with relaxation by two-level systems.

Role of exchange interaction in effecting spin-lattice relaxation: Interpretations of data onCr3+inCuMisra1 1998Phys. Rev. B11050View full textAdd to dashboardCite

“…In Ref. 4, eight samples, prepared by different techniques, were investigated: those implanted with 40 Ar ϩ , 40 Ar 2ϩ , 28 Sr ϩ , 20 Ne 2ϩ , 16 O ϩ , 14 N ϩ , as well as those prepared by evaporation and sputtering, with spin densities ͑cm Ϫ3 ͒ varying in the range (2.4-42.0)ϫ10 18 , with the g factors of the dangling bonds lying in the range 2.0057-2.0058 except for the 16 O ϩ -implanted sample with gϭ2.0061. As for the linewidths, they were found to be in the range 6.0-6.3 G, except for the evaporated and sputtered samples characterized by the values 10.2 and 13.8 G, respectively.…”