D-Band Frequency Quadruplers in BiCMOS Technology

Kucharski, Maciej; Eissa, Mohamed Hussein; Malignaggi, Andrea; Wang, Defu; Ng, Herman Jalli; Kissinger, Dietmar

doi:10.1109/jssc.2018.2843332

Cited by 51 publications

(11 citation statements)

References 24 publications

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“…In this frequency range, a number of approaches for signal generation have been published during the last years. They range from frequency multipliers [95] to power amplifiers [93], [96], [97]. Fig.…”

Section: D-band Radar Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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Section: D-band Radar Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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“…This Work JSSC'04 [4] ISSCC'08 [5] ISSCC'12 [6] RFIC'15 [1] RFIC'17 [2] JSSC'18 [7] TMTT'20 [3] MWCL'20 [8] Topology Figure 5 demonstrates the measured output power, drain efficiency, and HRR across the RTWO's TR with and without the RTWO phase calibration, and it also includes the power consumption breakdown of the entire system. The output power varies from −12.8 dBm to −4 dBm over the TR (the tracking filter is not tuned in this measurement).…”

Section: Publicationmentioning

confidence: 99%

“…The measured PN varies respectively by 1.5 dB and 1 dB (without calibration) and 0.9 dB and 0.7 dB (with calibration) at 1 MHz and 10 MHz offsets over the entire TR. Performance comparison of the proposed architecture with state-of-the-art mmW frequency quadruplers [1][2][3][4][5][6][7], [8] is given in Table I. The proposed quadrupler achieves the best harmonic rejection and the lowest power consumption with the most compact core area.…”

Section: Publicationmentioning

confidence: 99%

“…Another way is to use a frequency quadrupler. Several techniques have been proposed in the literature to implement such a quadrupler: class-B/C amplifier [4], linear superposition (LS) [5], phase-controlled push-push (PCPP) [6], and injection locking [7], etc. In this letter, we introduce a new logic-based frequency quadrupler that combines four complementary square-wave pulses that can be effectively produced from a co-located 10 GHz rotary traveling-wave oscillator (RTWO) in order to generate an output signal at 40 GHz with good harmonic rejection of RTWO harmonics.…”

Section: Introductionmentioning

confidence: 99%

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A 32–42-GHz RTWO-Based Frequency Quadrupler Achieving >37 dBc Harmonic Rejection in 22-nm FD-SOI

Shehata

Roy

Breslin

et al. 2021

IEEE Solid-State Circuits Lett.

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In this letter, we propose a 32-42 GHz frequency quadrupler that performs digital logic operations between four phase-shifted differential signals at one-fourth of the output frequency. The four phase-shifted signals are generated via a 10 GHz rotary traveling-wave oscillator (RTWO) and are symmetrically routed to the quadrupler using a CMOS buffered clock tree. The harmonic rejection ratio (HRR) is enhanced by employing a differential LC filter tuned at its output center frequency. The proposed frequency quadrupler is implemented in 22-nm FD-SOI CMOS. At 37 GHz, it produces an output power of −4 dBm with a 10% drain efficiency. It consumes 4 mW from 0.8 V supply and occupies a core area of 0.021 mm 2 . The worstcase HRR for fundamental. second, third, and fifth harmonics are 41.3, 48.6, 41.3, and 37.3 dBc, respectively.

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“…Additionally, dominant high-frequency effects in terms of high conductor/substrate losses and increased parasitic elements of the transistor reduce its output power. These challenges make it difficult to design efficient and high power solid-state circuits such as voltage controlled oscillators (VCOs) [16], frequency multipliers [17], [18], and power amplifiers (PAs) [19], [20].…”

Section: Introductionmentioning

confidence: 99%

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology

et al. 2020

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This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and an output power higher than 27 dB and 13 dBm, respectively. Then, a 4-way combiner/splitter was designed using low-loss transmission lines at 130-210 GHz. Finally, the combiner was loaded with four single-ended PAs to complete the design of a 4-way combined PA. The chip of the fabricated PA occupies an area of 1.35 mm 2. The realized PA shows a saturated output power of 18.1 dBm with a peak gain of 25.9 dB and power-added efficiency (PAE) of 3.5 % at 185 GHz. A maximum output power of 18.7 dBm with PAE of 4.4 % is achieved at 170 GHz. The 3-dB and 6-dB bandwidth of the PA are 27 and 42 GHz, respectively. In addition, the PA delivers a saturated output power higher than 18 dBm in the frequency range 140-186 GHz. To the best of our knowledge, the power reported in this paper is the highest for G-band SiGe BiCMOS PAs.

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D-Band Frequency Quadruplers in BiCMOS Technology

Cited by 51 publications

References 24 publications

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

A 32–42-GHz RTWO-Based Frequency Quadrupler Achieving >37 dBc Harmonic Rejection in 22-nm FD-SOI

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology

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